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XP06210 PDF预览

XP06210

更新时间: 2024-01-01 09:06:52
品牌 Logo 应用领域
其他 - ETC 晶体晶体管开关光电二极管
页数 文件大小 规格书
3页 64K
描述
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-363

XP06210 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:SC-88
包装说明:SMALL OUTLINE, R-PDSO-G6针数:6
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.83
Is Samacsys:N其他特性:BUILT IN BIAS RESISTOR
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:50 V
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):160
JESD-30 代码:R-PDSO-G6JESD-609代码:e6
湿度敏感等级:1元件数量:2
端子数量:6封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):0.15 W认证状态:Not Qualified
子类别:BIP General Purpose Small Signal表面贴装:YES
端子面层:Tin/Bismuth (Sn/Bi)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):150 MHzBase Number Matches:1

XP06210 数据手册

 浏览型号XP06210的Datasheet PDF文件第2页浏览型号XP06210的Datasheet PDF文件第3页 
Composite Transistors  
XP06210 (XP6210)  
Silicon NPN epitaxial planer transistor  
Unit: mm  
For switching/digital circuits  
2.1 0.1  
0.425  
1.25 0.1  
0.425  
1
6
Features  
I
G
2
3
5
4
Two elements incorporated into one package.  
(Transistors with built-in resistor)  
G
Reduction of the mounting area and assembly cost by one half.  
Basic Part Number of Element  
UNR1210(UN1210) × 2 elements  
I
G
0.2 0.1  
1 : Emitter (Tr1)  
2 : Emitter (Tr2)  
3 : Base (Tr2)  
4 : Collector (Tr2)  
5 : Base (Tr1)  
6 : Collector (Tr1)  
EIAJ : SC–88  
Absolute Maximum Ratings (Ta=25˚C)  
I
Parameter  
Symbol  
VCBO  
VCEO  
IC  
Ratings  
Unit  
V
S–Mini Type Package (6–pin)  
Collector to base voltage  
Collector to emitter voltage  
Collector current  
Total power dissipation  
50  
50  
Rating  
of  
V
Marking Symbol: CR  
Internal Connection  
element  
100  
mA  
mW  
˚C  
PT  
150  
Overall Junction temperature  
Storage temperature  
Tj  
150  
Tr1  
1
6
5
4
Tstg  
–55 to +150  
˚C  
2
3
Tr2  
Electrical Characteristics (Ta=25˚C)  
I
Parameter  
Symbol  
VCBO  
Conditions  
min  
50  
typ  
max  
Unit  
V
Collector to base voltage  
IC = 10µA, IE = 0  
Collector to emitter voltage  
VCEO  
ICBO  
ICEO  
IEBO  
hFE  
IC = 2mA, IB = 0  
VCB = 50V, IE = 0  
VCE = 50V, IB = 0  
VEB = 6V, IC = 0  
VCE = 10V, IC = 5mA  
50  
V
0.1  
0.5  
µA  
µA  
mA  
Collector cutoff current  
Emitter cutoff current  
0.01  
460  
Forward current transfer ratio  
Forward current transfer hFE ratio  
160  
0.5  
hFE (small/large)*1 VCE = 10V, IC = 5mA  
0.99  
Collector to emitter saturation voltage VCE(sat)  
IC = 10mA, IB = 0.3mA  
0.25  
0.2  
V
V
Output voltage high level  
Output voltage low level  
Transition frequency  
VOH  
VOL  
fT  
VCC = 5V, VB = 0.5V, RL = 1kΩ  
VCC = 5V, VB = 2.5V, RL = 1kΩ  
VCB = 10V, IE = –2mA, f = 200MHz  
4.9  
V
150  
47  
MHz  
kΩ  
Input resistance  
R1  
–30%  
+30%  
*1 Ratio between 2 elements  
Note.) The Part number in the Parenthesis shows conventional part number.  
1

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