Datasheet > XP06501(XP6501)

XP06501(XP6501)

更新时间： 2024-11-30 23:33:55

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描述
複合デバイス－複合トランジスタ

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中文翻译

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数据手册

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XP06501(XP6501) 数据手册

Composite Transistors

XP06501 (XP6501)

Silicon NPN epitaxial planer transistor

Unit: mm

For general amplification

2.1 0.1

0.425

1.25 0.1

0.425

Features

Two elements incorporated into one package.

Reduction of the mounting area and assembly cost by one half.

Basic Part Number of Element

2SD0601A(2SD601A) × 2 elements

0.2 0.1

Absolute Maximum Ratings (Ta=25˚C)

1 : Emitter (Tr1)

2 : Emitter (Tr2)

3 : Base (Tr2)

4 : Collector (Tr2)

5 : Base (Tr1)

6 : Collector (Tr1)

EIAJ : SC–88

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_C

Ratings

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Peak collector current

Total power dissipation

S–Mini Type Package (6–pin)

Rating

Marking Symbol: 5N

Internal Connection

element

100

˚C

I_CP

200

P_T

150

Tr1

Overall Junction temperature

Storage temperature

T_j

150

T_stg

–55 to +150

˚C

Tr2

Electrical Characteristics (Ta=25˚C)

Parameter

Symbol

V_CBO

Conditions

min

typ

max

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

I_C= 10µA, I_E= 0

V_CEO

V_EBO

I_CBO

I_CEO

h_FE

I_C= 2mA, I_B= 0

I_E= 10µA, I_C= 0

V_CB= 20V, I_E= 0

V_CE= 10V, I_B= 0

V_CE= 10V, I_C= 2mA

0.1

100

460

µA

Collector cutoff current

Forward current transfer ratio

160

0.5

Forward current transfer h_FEratio

h_FE(small/large)^*1V_CE= 10V, I_C= 2mA

0.99

0.1

Collector to emitter saturation voltage V_CE(sat)

I_C= 100mA, I_B= 10mA

0.3

MHz

Transition frequency

f_T

V_CB= 10V, I_E= –2mA, f = 200MHz

V_CB= 10V, I_E= 0, f = 1MHz

150

3.5

Collector output capacitance

^*1Ratio between 2 elements

C_ob

Note.) The Part number in the Parenthesis shows conventional part number.

12 3

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