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XP0B301 PDF预览

XP0B301

更新时间: 2024-12-01 19:22:55
品牌 Logo 应用领域
松下 - PANASONIC 放大器光电二极管晶体管
页数 文件大小 规格书
5页 54K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon, SC-88A, 5 PIN

XP0B301 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SC-88A包装说明:SMALL OUTLINE, R-PDSO-G5
针数:5Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.83最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:CASCADED, 2 ELEMENTS
最小直流电流增益 (hFE):160JESD-30 代码:R-PDSO-G5
JESD-609代码:e6湿度敏感等级:1
元件数量:2端子数量:5
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN AND PNP认证状态:Not Qualified
表面贴装:YES端子面层:Tin/Bismuth (Sn/Bi)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):150 MHz
Base Number Matches:1

XP0B301 数据手册

 浏览型号XP0B301的Datasheet PDF文件第2页浏览型号XP0B301的Datasheet PDF文件第3页浏览型号XP0B301的Datasheet PDF文件第4页浏览型号XP0B301的Datasheet PDF文件第5页 
Composite Transistors  
XP1B301  
Silicon PNP epitaxial planer transistor (Tr1)  
Silicon NPN epitaxial planer transistor (Tr2)  
Unit: mm  
For general amplification  
2.1±0.1  
1.25±0.1  
0.425  
0.425  
5
Features  
1
Two elements incorporated into one package.  
(Tr1 emitter is connected to Tr2 base.)  
2
3
4
Reduction of the mounting area and assembly cost by one half.  
Basic Part Number of Element  
2SB709A+2SD601A  
0.2±0.1  
1 : Base (Tr1)  
2 : Base (Tr2)  
Emitter (Tr1)  
3 : Emitter (Tr2)  
4 : Collector (Tr2)  
5 : Collector (Tr1)  
EIAJ : SC–88A  
Absolute Maximum Ratings (Ta=25˚C)  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Ratings  
–60  
Unit  
V
S–Mini Type Package (5–pin)  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current  
Peak collector current  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current  
Peak collector current  
Total power dissipation  
Junction temperature  
Storage temperature  
–50  
V
Marking Symbol: 4Q  
Internal Connection  
Tr1  
–7  
V
–100  
–200  
60  
mA  
mA  
V
ICP  
Tr1  
1
5
4
VCBO  
VCEO  
VEBO  
IC  
50  
V
2
Tr2  
7
V
3
100  
mA  
mA  
mW  
˚C  
Tr2  
ICP  
200  
PT  
150  
Tj  
150  
Overall  
Tstg  
–55 to +150  
˚C  
1

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