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XP1006-BD-000V PDF预览

XP1006-BD-000V

更新时间： 2024-01-17 14:08:34
品牌 Logo 应用领域
MIMIX 射频和微波射频放大器微波放大器功率放大器高功率电源
页数 文件大小 规格书
8页 226K
描述
8.5-11.0 GHz GaAs MMIC Power Amplifier

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XP1006-BD-000V 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：ObsoleteReach Compliance Code：unknown
风险等级：5.71构造：COMPONENT
增益：21 dBJESD-609代码：e3
最大工作频率：11000 MHz最小工作频率：8500 MHz
射频/微波设备类型：WIDE BAND HIGH POWER端子面层：Matte Tin (Sn)
Base Number Matches：1

XP1006-BD-000V 数据手册

 浏览型号XP1006-BD-000V的Datasheet PDF文件第2页浏览型号XP1006-BD-000V的Datasheet PDF文件第3页浏览型号XP1006-BD-000V的Datasheet PDF文件第4页浏览型号XP1006-BD-000V的Datasheet PDF文件第5页浏览型号XP1006-BD-000V的Datasheet PDF文件第6页浏览型号XP1006-BD-000V的Datasheet PDF文件第7页 
8.5-11.0 GHz GaAs MMIC  
Power Amplifier  
August 2007 - Rev 03-Aug-07  
P1006-BD  
Features  
Chip Device Layout  
X-Band 10W Power Amplifier  
21.0 dB Large Signal Gain  
+40.0 dBm Saturated Output Power  
30% Power Added Efficiency  
On-chip Gate Bias Circuit  
XP1006  
MIMIX BROADBAND  
10004966  
TNO COPYRIGHT 2005  
X=4940  
100% On-Wafer RF, DC and Output Power Testing  
100% Visual Inspection to MIL-STD-883  
Method 2010  
Y=4290  
General Description  
Mimix Broadband’s three stage 8.5-11.0 GHz GaAs  
MMIC power amplifier has a large signal gain of 21.0  
dB with a +40.0 dBm saturated output power and also  
includes on-chip gate bias circuitry.This MMIC uses  
Mimix Broadband’s 0.5 m GaAs PHEMT device model  
technology, and is based upon optical gate  
Absolute Maximum Ratings  
lithography to ensure high repeatability and  
uniformity.The chip has surface passivation to protect  
and provide a rugged part with backside via holes  
and gold metallization to allow either a conductive  
epoxy or eutectic solder die attach process.This  
device is well suited for radar applications.  
Supply Voltage (Vd)  
Supply Current (Id)  
Gate Bias Voltage (Vg)  
Input Power (Pin)  
Storage Temperature (Tstg) -65 to +165 OC  
Operating Temperature (Ta) -55 to MTTF Table  
+9.0 VDC  
4.5 A  
+0.0 VDC  
TBD  
1
1
Channel Temperature (Tch) MTTF Table  
(1) Channel temperature affects a device's MTTF. It is  
recommended to keep channel temperature as low as  
possible for maximum life.  
Electrical Characteristics (Pulsed Mode F=10kHz, Duty Cycle=10%,TA=25ºC)  
Parameter  
Frequency Range (f)  
Input Return Loss (S11)  
Output Return Loss (S22)  
Large Signal Gain (S21)  
Gain Flatness ( S21)  
Units  
GHz  
dB  
dB  
dB  
Min.  
8.5  
-
-
-
-
-
-
Typ.  
-
Max.  
11.0  
-
-
-
-
-
-
-
15.0  
12.0  
21.0  
+/-0.5  
60.0  
+40.0  
30  
+8.0  
-5.0  
4.2  
dB  
dB  
Reverse Isolation (S12)  
Saturated Output Power (PSAT)  
Power Added Efficiency (PAE)  
Drain Bias Voltage (Vd1,2,3)  
Gate Bias Voltage (Vgg)  
dBm  
%
VDC  
VDC  
A
-
-
-6.0  
-
+9.0  
-4.0  
4.5  
Supply Current (Id) (Vd=8.0V,Vgg=-5.0V Typical)  
Page 1 of 8  
Mimix Asia, Inc. (a subsidiary of Mimix Broadband, Inc.)  
3F, 3-2 Industry East IX Road, Science-Based Industrial Park • Hsinchu,Taiwan, R.O.C  
Tel +886-3-567-9680 • Fax +886-3-567-9433 • mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.  
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