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XP1003-BD-000V PDF预览

XP1003-BD-000V

更新时间： 2024-02-23 05:40:30
品牌 Logo 应用领域
MIMIX 射频微波
页数 文件大小 规格书
6页 560K
描述
Wide Band Medium Power Amplifier, 27000MHz Min, 35000MHz Max, ROHS COMPLIANT, DIE-13

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XP1003-BD-000V 技术参数

是否Rohs认证： 符合生命周期：Transferred
Reach Compliance Code：unknown风险等级：5.17
构造：COMPONENT增益：15 dB
最大输入功率 (CW)：15 dBmJESD-609代码：e3
最大工作频率：35000 MHz最小工作频率：27000 MHz
射频/微波设备类型：WIDE BAND MEDIUM POWER端子面层：Matte Tin (Sn)
Base Number Matches：1

XP1003-BD-000V 数据手册

 浏览型号XP1003-BD-000V的Datasheet PDF文件第2页浏览型号XP1003-BD-000V的Datasheet PDF文件第3页浏览型号XP1003-BD-000V的Datasheet PDF文件第4页浏览型号XP1003-BD-000V的Datasheet PDF文件第5页浏览型号XP1003-BD-000V的Datasheet PDF文件第6页 
27.0-35.0 GHz GaAs MMIC  
Power Amplifier  
April 2007 - Rev 02-Apr-07  
P1003-BD  
Features  
Chip Device Layout  
Balanced Design Provides Good Input/Output Match  
On-Chip Temperature Compensated Output  
Power Detector  
15.0 dB Small Signal Gain  
+34.0 dBm Third Order Intercept (OIP3)  
100% On-Wafer RF, DC and Output Power Testing  
100% Visual Inspection to MIL-STD-883  
Method 2010  
XP1003-BD  
General Description  
Mimix Broadband’s two stage 27.0-35.0 GHz GaAs  
MMIC power amplifier is optimized for linear operation  
with a third order intercept point of +34.0 dBm.The  
device also includes Lange couplers to achieve good  
input/output return loss and an on-chip temperature  
compensated output power detector.This MMIC uses  
Mimix Broadband’s GaAs PHEMT device model  
technology, and is based upon electron beam  
lithography to ensure high repeatability and uniformity.  
The chip has surface passivation to protect and provide  
a rugged part with backside via holes and gold  
metallization to allow either a conductive epoxy or  
eutectic solder die attach process.This device is well  
suited for Millimeter-wave Point-to-Point Radio, LMDS,  
SATCOM and VSAT applications.  
Absolute Maximum Ratings  
Supply Voltage (Vd)  
Supply Current (Id)  
Gate Bias Voltage  
Input Power (Pin)  
+6.0 VDC  
950 mA  
+0.3 VDC  
+15 dBm  
Storage Temperature (Tstg) -65 to +165 OC  
Operating Temperature (Ta) -55 to MTTF Table  
4
4
Channel Temperature (Tch) MTTF Table  
(4) Channel temperature affects a device's MTTF. It is  
recommended to keep channel temperature as low as  
possible for maximum life.  
Electrical Characteristics (AmbientTemperatureT = 25 oC)  
Parameter  
Units  
GHz  
dB  
dB  
dB  
Min.  
27.0  
-
-
-
-
-
-
Typ.  
-
Max.  
35.0  
-
-
-
-
-
-
-
+5.5  
0.0  
880  
-
Frequency Range (f)  
Input Return Loss (S11)  
12.0  
18.0  
15.0  
+/-1.0  
35.0  
+24.0  
+34.0  
+4.5  
-0.7  
Output Return Loss (S22)  
Small Signal Gain (S21)  
Gain Flatness ( S21)  
Reverse Isolation (S12)  
dB  
dB  
2
Output Power for 1 dB Compression (P1dB)  
Output Third Order Intercept Point (OIP3)  
Drain Bias Voltage (Vd1,2,3,4)  
dBm  
dBm  
VDC  
VDC  
mA  
VDC  
1,2  
-
-
Gate Bias Voltage (Vg1,2,3,4)  
-1.0  
-
-
Supply Current (Id) (Vd=4.5V,Vg=-0.7V Typical)  
440  
0.3  
3
Detector (diff) Output at 20 dBm  
(1) Measured at +17 dBm per tone output carrier level across the full frequency band.  
(2) Measured using constant current.  
(3) Measured with either Vin=1.0V or Vin=5.5V and Rin=5.6k  
.
Page 1 of 6  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  
123456

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