Datasheet > XP0D873|XP1D873

XP0D873|XP1D873

更新时间： 2024-11-30 23:33:55

品牌	Logo	应用领域
其他 - ETC		二极管
页数	文件大小	规格书
3页	79K
描述
Composite Device - Diodes - Composite Diodes

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中文翻译

获取价格

数据手册

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XP0D873|XP1D873 数据手册

Composite Transistors

XP0D873 (XP1D873)

Silicon N-channel junction FET

Unit: mm

+0.05

0.12

–0.02

0.20 ^0.05

For analog switching

■ Features

• Two elements incorporated into one package

• Reduction of the mounting area and assembly cost by one half

0.65 0.65

1.3 0.1

2.0 0.1

■ Basic Part Number

• 2SK1103 × 2

10˚

■ Absolute Maximum Ratings T_a= 25°C

Parameter

Gate-drain surrender voltage

Drain current

Symbol

V_GDS

I_D

Rating

−50

Unit

1: Source (FET1)

2: Drain

3: Source (FET2)

EIAJ: SC-88A

4: Gate (FET2)

5: Gate (FET1)

°C

Gate current

I_G

SMini5-G1 Package

Total power dissipation

Channel temperature

Storage temperature

P_T

150

Marking Symbol: OC

T_ch

150

Internal Connection

T_stg

−55 to +150

°C

FET1

FET2

■ Electrical Characteristics T_a= 25°C 3°C

Parameter

Symbol

V_GDS

I_DSS

Conditions

I_C= −10 µA, V_DS= 0

Min

Typ

Max

Unit

Gate-drain surrender voltage

Drain-source cutoff current

Gate-source cutoff current

Gate-source cutoff voltage

Drain-source ON resistance

Mutual conductance

−50

V_DS= 10 V, V_GS= 0

0.2

6.0

−10

−3.5

I_GSS

V_GS= −30 V, V_DS= 0

V_DS= 10 V, I_D= 10 µA

V_DS= 10 mV, V_GS= 0

V_DS= 10 V, I_D= 1 mA, f = 1 kHz

V_GSC

R_DS(on)

−1.5

300

2.5

Ω

1.8

V_DS

= 10 V, V_GS= 0, f = 1 MHz

Short-circuit forward transfer

capacitance (Common-source)

C_iss

Short-circuit output capacitance

(Common-source)

C_oss

C_rss

1.5

Reverse transfer capacitance

(Common-source)

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.

Note) The part number in the parenthesis shows conventional part number.

Publication date: December 2003

SJJ00223BED

12 3

中文翻译

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