Datasheet > XP1008

XP1008

更新时间： 2024-12-05 03:13:59

品牌	Logo	应用领域
MIMIX		放大器功率放大器
页数	文件大小	规格书
6页	160K
描述
11.0-16.0 GHz GaAs MMIC Power Amplifier

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

XP1008 技术参数

生命周期：	Obsolete	包装说明：	DIE OR CHIP
Reach Compliance Code：	unknown	风险等级：	5.83
功能数量：	1	最低工作温度：	-55 °C
封装等效代码：	DIE OR CHIP	电源：	5 V
子类别：	RF/Microwave Amplifiers	技术：	GAAS

XP1008 数据手册

11.0-16.0 GHz GaAs MMIC

Power Amplifier

May 2006 - Rev 10-May-06

P1008

Features

Chip Device Layout

Excellent Linear Output Amplifier Stage

31.0 dB Small Signal Gain

+30.0 dBm P1dB Compression Point

+38.5 dBm Third Order Intercept (OIP3)

100% On-Wafer RF, DC and Output Power Testing

100% Visual Inspection to MIL-STD-883

Method 2010

General Description

Mimix Broadband’s three stage 11.0-16.0 GHz GaAs

MMIC power amplifier is optimized for linear operation

with a third order intercept point of +38.5 dBm.This

MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT

device model technology, and is based upon electron

beam lithography to ensure high repeatability and

uniformity.The chip has surface passivation to protect

and provide a rugged part with backside via holes and

gold metallization to allow either a conductive epoxy

or eutectic solder die attach process.This device is well

suited for Millimeter-wave Point-to-Point Radio, LMDS,

SATCOM and VSAT applications.

Absolute Maximum Ratings

Supply Voltage (Vd)

Supply Current (Id1,2,3)

Gate Bias Voltage

+5.5 VDC

80,175,750 mA

+0.3 VDC

Input Power (Pin)

+12 dBm

Storage Temperature (Tstg) -65 to +165 ^OC

Operating Temperature (Ta) -55 to MTTF TAble

Channel Temperature (Tch) MTTF Table

(3) Channel temperature affects a device's MTTF. It is

recommended to keep channel temperature as low as

possible for maximum life.

Electrical Characteristics (AmbientTemperatureT = 25 ^oC)

Parameter

Units

GHz

Min.

11.0

Typ.

7.0

Max.

16.0

Frequency Range (f)

Input Return Loss (S11)

Output Return Loss (S22)

Small Signal Gain (S21)

Gain Flatness ( S21)

Reverse Isolation (S12)

Output Power for 1 dB Compression (P1dB)

Output Third Order Intercept Point (OIP3)

Drain Bias Voltage (Vd1,2,3)

Gate Bias Voltage (Vg1,2,3)

dBm

VDC

17.0

31.0

+/-0.5

+30.0

+38.5

+5.0

-0.3

925

1,2

-1.0

0.0

Supply Current (Id) (Vd=5.0V,Vg=-0.3V Typical)

(1) Measured at +18 dBm per tone output carrier level across the full frequency band.

(2) Measured using constant current.

Page 1 of 6

Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099

Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com

Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept

their obligation to be compliant with U.S. Export Laws.

12 3 4 5 6

中文翻译

下载PDF

与XP1008相关器件

型号	品牌	获取价格	描述	数据表
XP1008-BD-000V	MIMIX	获取价格	Amplifier,
XP1008-BD-000W	MIMIX	获取价格	Wide Band Medium Power Amplifier, 11000MHz Min, 16000MHz Max, ROHS COMPLIANT, DIE-8
XP1009	MIMIX	获取价格	17.0-21.0 GHz GaAs MMIC Power Amplifier
XP1009-BD-000V	MIMIX	获取价格	Wide Band Medium Power Amplifier, 17000MHz Min, 21000MHz Max, ROHS COMPLIANT, DIE-6
XP1009-BD-000W	MIMIX	获取价格	Wide Band Medium Power Amplifier, 17000MHz Min, 21000MHz Max, ROHS COMPLIANT, DIE-6
XP1010	MIMIX	获取价格	21.0-24.0 GHz GaAs MMIC Power Amplifier
XP1010-BD-000V	MIMIX	获取价格	Wide Band Medium Power Amplifier, 21000MHz Min, 24000MHz Max, ROHS COMPLIANT, CHIP-6
XP1010-BD-000W	MIMIX	获取价格	Wide Band Medium Power Amplifier, 21000MHz Min, 24000MHz Max, ROHS COMPLIANT, CHIP-6
XP1011	MIMIX	获取价格	36.0-40.0 GHz GaAs MMIC Power Amplifier
XP1011-BD	MIMIX	获取价格	36.0-40.0 GHz GaAs MMIC Power Amplifier

与XP1008相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

60
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

50
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

78
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

70

产品中心

服务支持

精选活动

关于我们

帮助中心

XP1008

XP1008 技术参数

XP1008 数据手册

与XP1008相关器件

与XP1008相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

XP1008

XP1008 技术参数

XP1008 数据手册

与XP1008相关器件

与XP1008相关文章

您还可以找

您在本页遇到什么问题？