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XP1006-FA-0N00

更新时间： 2024-12-04 03:13:59
品牌 Logo 应用领域
MIMIX 射频和微波射频放大器微波放大器功率放大器高功率电源
页数 文件大小 规格书
6页 228K
描述
8.5-11.0 GHz GaAs Power Amplifier Flange, 10 pin

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XP1006-FA-0N00 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：TransferredReach Compliance Code：unknown
风险等级：5.17Is Samacsys：N
构造：COMPONENT增益：21.5 dB
JESD-609代码：e3最大工作频率：11000 MHz
最小工作频率：8500 MHz射频/微波设备类型：WIDE BAND HIGH POWER
端子面层：Matte Tin (Sn)Base Number Matches：1

XP1006-FA-0N00 数据手册

 浏览型号XP1006-FA-0N00的Datasheet PDF文件第2页浏览型号XP1006-FA-0N00的Datasheet PDF文件第3页浏览型号XP1006-FA-0N00的Datasheet PDF文件第4页浏览型号XP1006-FA-0N00的Datasheet PDF文件第5页浏览型号XP1006-FA-0N00的Datasheet PDF文件第6页 
8.5-11.0 GHz GaAs Power Amplifier  
Flange, 10 pin  
August 2006 - Rev 16-Aug-06  
P1006-FA  
Features  
X-Band 10W Power Amplifier  
Flange Package  
21.5 dB Large Signal Gain  
+40.5 dBm Saturated Output Power  
37% Power Added Efficiency  
100% On-Wafer RF, DC and Output Power Testing  
General Description  
Mimix Broadband’s three stage 8.5-11.0 GHz GaAs  
packaged power amplifier has a large signal gain of  
21.5 dB with a +40.5 dBm saturated output power.  
This device uses Mimix Broadband’s 0.5 m GaAs  
PHEMT device model technology, and is based upon  
Absolute Maximum Ratings  
optical gate lithography to ensure high repeatability  
and uniformity.The device comes in a 10 pin, high  
frequency, LCC flange package. The package has a  
copper composite base material and a laminated  
ceramic substrate.This device is well suited for radar  
applications.  
Supply Voltage (Vd)  
Supply Current (Id)  
Gate Bias Voltage (Vg)  
Input Power (Pin)  
Storage Temperature (Tstg) -65 to +165 OC  
Operating Temperature (Ta) -55 to MTTF Table  
+9.0 VDC  
4.5 A  
+0.0 VDC  
TBD  
1
1
Channel Temperature (Tch) MTTF Table  
(1) Channel temperature affects a device's MTTF. It is  
recommended to keep channel temperature as low as  
possible for maximum life.  
Electrical Characteristics (Pulsed Mode F=10kHz, Duty Cycle=5%,TA=25ºC)  
Parameter  
Units  
GHz  
dB  
dB  
dB  
Min.  
8.5  
Typ.  
-
Max.  
11.0  
-
-
-
-
-
-
-
Frequency Range (f)  
Input Return Loss (S11)1  
-
-
-
-
-
-
-
-
-
-
15.0  
12.0  
21.5  
+/-0.5  
60.0  
+40.5  
37  
+8.0  
-0.6  
4.0  
Output Return Loss (S22)1  
Large Signal Gain (S21)  
Gain Flatness ( S21)  
Reverse Isolation (S12)1  
Saturated Output Power (PSAT)  
Power Added Efficiency (PAE)  
Drain Bias Voltage (Vd1,2,3)  
Gate Bias Voltage (Vg)  
dB  
dB  
dBm  
%
VDC  
VDC  
A
+9.0  
-
4.5  
Supply Current (Id) (Vd=8.0V,Vg=-0.6V Typical)  
(1) Measured on-wafer pre-packaging.  
Page 1 of 6  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  
123456

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