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XP1006-FA_07 PDF预览

XP1006-FA_07

更新时间: 2022-04-23 23:00:11
品牌 Logo 应用领域
MIMIX 放大器功率放大器
页数 文件大小 规格书
6页 199K
描述
8.5-11.0 GHz GaAs Power Amplifier Flange, 10 pin

XP1006-FA_07 数据手册

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8.5-11.0 GHz GaAs Power Amplifier  
Flange, 10 pin  
August 2007 - Rev 21-Aug-07  
P1006-FA  
Features  
X-Band 10W Power Amplifier  
Flange Package  
21.5 dB Large Signal Gain  
+40.5 dBm Saturated Output Power  
37% Power Added Efficiency  
100% On-Wafer RF, DC and Output Power Testing  
General Description  
Mimix Broadbands three stage 8.5-11.0 GHz GaAs  
packaged power amplifier has a large signal gain of  
21.5 dB with a +40.5 dBm saturated output power.  
This device uses Mimix Broadbands 0.5 m GaAs  
PHEMT device model technology, and is based upon  
Absolute Maximum Ratings  
optical gate lithography to ensure high repeatability  
and uniformity.The device comes in a 10 pin, high  
frequency, LCC flange package. The package has a  
copper composite base material and a laminated  
ceramic substrate.This device is well suited for radar  
applications.  
Supply Voltage (Vd)  
Supply Current (Id)  
Gate Bias Voltage (Vg)  
Input Power (Pin)  
Storage Temperature (Tstg) -65 to +165 OC  
Operating Temperature (Ta) -55 to MTTF Table  
+9.0 VDC  
4.5 A  
+0.0 VDC  
TBD  
1
1
Channel Temperature (Tch) MTTF Table  
(1) Channel temperature affects a device's MTTF. It is  
recommended to keep channel temperature as low as  
possible for maximum life.  
Electrical Characteristics (Pulsed Mode F=10kHz, Duty Cycle=5%,TA=25ºC)  
Parameter  
Units  
GHz  
dB  
dB  
dB  
Min.  
8.5  
Typ.  
-
Max.  
11.0  
-
-
-
-
-
-
-
Frequency Range (f)  
Input Return Loss (S11)1  
-
-
-
-
-
-
-
-
-
-
15.0  
12.0  
21.5  
+/-0.5  
60.0  
+40.5  
37  
+8.0  
-0.6  
4.0  
Output Return Loss (S22)1  
Large Signal Gain (S21)  
Gain Flatness ( S21)  
Reverse Isolation (S12)1  
Saturated Output Power (PSAT)  
Power Added Efficiency (PAE)  
Drain Bias Voltage (Vd1,2,3)  
Gate Bias Voltage (Vg)  
dB  
dB  
dBm  
%
VDC  
VDC  
A
+9.0  
-
4.5  
Supply Current (Id) (Vd=8.0V,Vg=-0.6V Typical)  
(1) Measured on-wafer pre-packaging.  
Page 1 of 6  
Mimix Asia, Inc. (a subsidiary of Mimix Broadband, Inc.)  
3F, 3-2 Industry East IX Road, Science-Based Industrial Park • Hsinchu,Taiwan, R.O.C  
Tel +886-3-567-9680 • Fax +886-3-567-9433 • mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.  

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