Datasheet > XP1006-FA_07

XP1006-FA_07

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
MIMIX		放大器功率放大器
页数	文件大小	规格书
6页	199K
描述
8.5-11.0 GHz GaAs Power Amplifier Flange, 10 pin

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XP1006-FA_07 数据手册

8.5-11.0 GHz GaAs Power Amplifier

Flange, 10 pin

August 2007 - Rev 21-Aug-07

P1006-FA

App Note [1] Biasing - This device is biased with Vd(1,2,3) = 8.0V and 4.0 A (pin 6,10). The drain current is controlled by the gate bias

with a typical value of Vg = -0.6V (pin 1). It is recommended to use active biasing to keep the currents constant as the RF power and

temperature vary; this gives the most reproducible results. The recommended power-up sequence is described below:

1. Apply -2.0 V to Vg

2. Apply +8.0 V to Vd(1,2,3)

3. Adjust Vg to achieve nominal drain current

4. Apply RF power

5. Re-adjust Vg to maintain nominal drain current.

Depending on the supply voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a low

power operational amplifier, with a low value resistor in series with the drain supply used to sense the current. The gate of the pHEMT

is controlled to maintain correct drain current and thus drain voltage.

MTTF

MTTF is calculated from accelerated life-time data of single devices and assumes an isothermal back-plate.

XP1006-FA, MTTF with RF Power Applied

1.0E+06

100% DC duty cycle

1.0E+05

50% DC duty cycle

1.0E+04

30% DC duty cycle

1.0E+03

10% DC duty cycle

1.0E+02

1.0E+01

1.0E+00

1.0E-01

100 110 120

Backplate Temperature (C)

XP1006-FA, MTTF without RF Power

1.0E+05

1.0E+04

1.0E+03

1.0E+02

1.0E+01

1.0E+00

1.0E-01

1.0E-02

100% DC duty cycle

50% DC duty cycle

30% DC duty cycle

10% DC duty cycle

100 110 120

Backplate Temperature (C)

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