Datasheet > XP0D874(XP1D874)

XP0D874(XP1D874)

更新时间： 2024-11-30 23:33:55

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
3页	52K
描述
Composite Device - Composite Transistors

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中文翻译

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数据手册

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XP0D874(XP1D874) 数据手册

Composite Transistors

XP0D874 (XP1D874)

N-channel junction FET

Unit: mm

+0.05

–0.02

0.12

For low-frequency impedance conversion

For infrared sensor

0.20±0.05

■ Features

• Two elements incorporated into one package

• Reduction of the mounting area and assembly cost by one half

(0.65) (0.65)

1.3±0.1

2.0±0.1

■ Basic Part Number of Element

• 2SK1842 × 2 elements

10˚

■ Absolute Maximum Ratings T_a= 25°C

Parameter

Symbol

V_GDO

V_GSO

I_D

Rating

Unit

1: Source (FET1)

2: Drain

3: Source (FET2)

4: Gain (FET2)

5: Gain (FET1)

EIAJ: SC-88A

Rating

Gate to drain voltage

Gate to source voltage

−40

SMini5-G1 Package

−40

element Drain current

Gate current

°C

Marking Symbol: EQ

I_G

Internal Connection

Total

Total power dissipation

P_T

150

Channel temperature

Storage temperature

T_ch

150

T_stg

−55 to +150

°C

FET1

FET2

■ Electrical Characteristics T_a= 25°C ± 3°C

Parameter

Gate to drain voltage

Drain current

Symbol

V_GDS

I_DSS

Conditions

Min

Typ

Max

Unit

_G= −10 µA, V_DS= 0

−40

_DS= 10 V, V_GS= 0

200

− 0.5

−3.0

µA

Gate cutoff current

I_GSS

_GS= −20 V, V_DS= 0

Gate to source cutoff voltage

Forward transfer admittance

V_GSC

Y_fs

_DS= 10 V, I_D= 1 µA

−1.3

_DS= 10 V, V_GS= 0, f = 1 KHz

_DS= 10 V, V_GS= 0, f = 1 MHz

0.05

Small-signal short-circuit

input capacitance

C_iss

1.0

0.4

Small-signal short-circuit

output capacitance

C_oss

C_rss

_DS= 10 V, V_GS= 0, f = 1 MHz

Small-signal reverse

transfer capacitance

Note) The part number in the parenthesis shows conventional part number.

Publication date: May 2002

SJJ00224BED

12 3

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