Datasheet > XP0D874|XP1D874

XP0D874|XP1D874

更新时间： 2024-11-30 23:33:55

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
3页	78K
描述
Composite Device - Composite Transistors

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中文翻译

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数据手册

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XP0D874|XP1D874 数据手册

Composite Transistors

XP0D874 (XP1D874)

N-channel junction FET

Unit: mm

+0.05

0.12

For low-frequency impedance conversion

For infrared sensor

–0.02

0.20 0.05

■ Features

• Two elements incorporated into one package

• Reduction of the mounting area and assembly cost by one half

0.65 0.65

1.3 0.1

2.0 0.1

■ Basic Part Number

• 2SK1842 × 2

10˚

■ Absolute Maximum Ratings T_a= 25°C

Parameter

Gate-drain voltage (Source open)

Gate-source voltage (Drain open)

Drain current

Symbol

V_GDO

V_GSO

I_D

Rating

Unit

1: Source (FET1)

2: Drain

3: Source (FET2)

EIAJ: SC-88A

4: Gate (FET2)

5: Gate (FET1)

−40

SMini5-G1 Package

−40

°C

Marking Symbol: EQ

Gate current

I_G

Internal Connection

Total power dissipation

Channel temperature

Storage temperature

P_T

150

T_ch

150

T_stg

−55 to +150

°C

FET1

FET2

■ Electrical Characteristics T_a= 25°C 3°C

Parameter

Symbol

V_GDS

I_DSS

Conditions

I_G= −10 µA, V_DS= 0

Min

Typ

Max

Unit

Gate-drain surrender voltage

Drain-source cutoff current

Gate-source cutoff current

Gate-source cutoff voltage

Forward transfer admittance

−40

V_DS= 10 V, V_GS= 0

200

− 0.5

−3.0

µA

I_GSS

V_GS= −20 V, V_DS= 0

V_GSC

Y_fs

C_iss

V_DS= 10 V, I_D= 1 µA

−1.3

V_DS= 10 V, V_GS= 0, f = 1 KHz

V_DS= 10 V, V_GS= 0, f = 1 MHz

0.05

Short-circuit forward transfer

capacitance (Common-source)

1.0

0.4

Short-circuit output capacitance

(Common-source)

C_oss

C_rss

Reverse transfer capacitance

(Common-source)

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.

Note) The part number in the parenthesis shows conventional part number.

Publication date: December 2003

SJJ00224CED

12 3

中文翻译

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