Datasheet > XP06543|XP6543

XP06543|XP6543

更新时间： 2024-11-30 23:33:55

品牌	Logo	应用领域
松下 - PANASONIC		晶体晶体管
页数	文件大小	规格书
3页	78K
描述
Composite Device - Composite Transistors

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XP06543|XP6543 数据手册

Composite Transistors

XP06543

Silicon NPN epitaxial planar type

Unit: mm

+0.05

0.12

–0.02

0.2 ^0.05

For low noise amplification

■ Features

• High transition frequency f_T

• Two elements incorporated into one package (Each transistor is

separated)

(0.65) (0.65)

1.3 0.1

2.0 0.1

■ Basic Part Number

10˚

•

2SC3904 × 2

■ Absolute Maximum Ratings T_a= 25°C

Parameter

Symbol

Rating

Unit

1: Emitter (Tr1)

2: Emitter (Tr2)

3: Base (Tr2)

4: Collector (Tr2)

5: Base (Tr1)

6: Collector (Tr1)

SMini6-G1 Package

Collector-base voltage (Emitter open) V_CBO

Collector-emitter voltage (Base open) V_CEO

Emitter-base voltage (Collector open) V_EBO

Marking Symbol: 9Y

Internal Connection

Collector current

I_C

P_T

T_j

°C

Total power dissipation

Junction temperature

Storage temperature

150

T_stg

−55 to +150

Tr1

Tr2

■ Electrical Characteristics T_a= 25°C 3°C

Parameter

Symbol

I_CBO

I_EBO

h_FE

Conditions

Min

Typ

Max

Unit

µA



Collector-base cutoff current (Emitter open)

Emitter-base cutoff current (Collector open)

Forward current transfer ratio ^*

Transition frequency ^*

V_CB= 10 V, I_E= 0

V_EB= 1 V, I_C= 0

V_CE= 8 V, I_C= 20 mA

120

8.5

2.2

0.6

300

f_T

V_CE= 8 V, I_C= 20 mA, f = 1.5 GHz

V_CE= 8 V, I_C= 7 mA, f = 1.5 GHz

V_CB= 10 V, I_E= 0, f = 1 MHz

7.0

GHz

Noise figure

3.0

1.0

Collector output capacitance

C_ob

(Common base, input open circuited)

Forward transfer gain ^*

S_21e²V_CE= 8 V, I_C= 20 mA, f = 1.5 GHz

G_UMV_CE= 8 V, I_C= 20 mA, f = 1.5 GHz

Maximum unilateral power gain ^*

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. : Pulse measurement

Publication date: June 2003

SJJ00217BED

12 3

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