Datasheet > XP06401(XP6401)

XP06401(XP6401)

更新时间： 2024-11-30 23:33:55

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
4页	60K
描述
Composite Device - Composite Transistors

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中文翻译

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XP06401(XP6401) 数据手册

Composite Transistors

XP06401 (XP6401)

Silicon PNP epitaxial planer transistor

Unit: mm

For general amplification

+0.05

–0.02

0.12

0.2±0.05

Features

■

Two elements incorporated into one package.

■

Reduction of the mounting area and assembly cost by one half.

(0.65) (0.65)

1.3±0.1

2.0±0.1

10°

Basic Part Number of Element

2SB0709A(2SB709A) × 2 elements

■

Absolute Maximum Ratings (Ta=25˚C)

■

1 : Emitter (Tr1)

2 : Emitter (Tr2)

3 : Base (Tr2)

4 : Collector (Tr2)

5 : Base (Tr1)

6 : Collector (Tr1)

EIAJ : SC–88

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_C

Ratings

–60

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Peak collector current

Total power dissipation

SMini6-G1 Package

–50

Rating

element

–7

Marking Symbol: 5O

Internal Connection

–100

˚C

I_CP

–200

P_T

150

Tr1

Overall Junction temperature

Storage temperature

T_j

150

T_stg

–55 to +150

˚C

Tr2

Electrical Characteristics (Ta=25˚C)

■

Parameter

Symbol

V_CBO

Conditions

min

–60

–50

–7

typ

max

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

I_C= –10µA, I_E= 0

V_CEO

V_EBO

I_CBO

I_CEO

h_FE

I_C= –2mA, I_B= 0

I_E= –10µA, I_C= 0

V_CB= –20V, I_E= 0

V_CE= –10V, I_B= 0

V_CE= –10V, I_C

– 0.1

–100

µA

Collector cutoff current

Forward current transfer ratio

–2mA160

–2mA0.5

460

Forward current transfer h_FEratio

h_FE(small/large)^*1V_CE= –10V, I_C

0.99

Collector to emitter saturation voltage V_CE(sat)

I_C= –100mA, I_B

–10mA–

MHz

Transition frequency

f_T

V_CB= –10V, I_E= 1mA, f = 200MHz

V_CB= –10V, I_E= 0, f = 1MHz

Collector output capacitance

^*1Ratio between 2 elements

C_ob

2.7

Note) The Part number in the Parenthesis shows conventional part number.

12 3 4

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