Datasheet > XP06435(XP6435)

XP06435(XP6435)

更新时间： 2024-11-30 23:33:55

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页数	文件大小	规格书
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描述
複合デバイス－複合トランジスタ

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XP06435(XP6435) 数据手册

Composite Transistors

XP06435 (XP6435)

Silicon PNP epitaxial planer transistor

Unit: mm

For high-frequency amplification

2.1 0.1

0.425

1.25 0.1

0.425

Features

Two elements incorporated into one package.

Reduction of the mounting area and assembly cost by one half.

Basic Part Number of Element

2SA1022 × 2 elements

0.2 0.1

Absolute Maximum Ratings (Ta=25˚C)

1 : Emitter (Tr1)

2 : Emitter (Tr2)

3 : Base (Tr2)

4 : Collector (Tr2)

5 : Base (Tr1)

6 : Collector (Tr1)

EIAJ : SC–88

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_C

Ratings

–30

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Total power dissipation

S–Mini Type Package (6–pin)

Rating

–20

–5

element

Marking Symbol: 7W

Internal Connection

–30

˚C

P_T

150

Overall Junction temperature

Storage temperature

T_j

150

Tr1

T_stg

–55 to +150

˚C

Tr2

Electrical Characteristics (Ta=25˚C)

Parameter

Symbol

I_CBO

Conditions

min

typ

max

– 0.1

–100

–10

Unit

µA

V_CB= –10V, I_E= 0

Collector cutoff current

I_CEO

I_EBO

h_FE

V_CE= –20V, I_B= 0

V_EB= –5V, I_C= 0

µA

Emitter cutoff current

µA

Forward current transfer ratio

Forward current transfer h_FEratio

V_CB= –10V, I_E= 1mA

220

h_FE(small/large)^*1V_CB= –10V, I_E= 1mA

0.5

0.99

– 0.1

– 0.7

Collector to emitter saturation voltage V_CE(sat)

I_C= –10mA, I_B= –1mA

Base to emitter voltage

Transition frequency

Noise figure

V_BE

f_T

V_CE= –10V, I_C= –1mA

V_CB= –10V, I_E= 1mA, f = 200MHz

V_CB= –10V, I_E= 1mA, f = 5MHz

V_CB= –10V, I_E= 1mA, f = 2MHz

V_CB= –10V, I_E= 1mA, f = 10.7MHz

150

MHz

Ω

Z_rb

2.8

Reverse transfer impedance

Common emitter reverse transfer capacitance C_re

1.2

^*1Ratio between 2 elements

Note.) The Part number in the Parenthesis shows conventional part number.

12 3

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