5秒后页面跳转
XP06213 PDF预览

XP06213

更新时间: 2024-02-29 04:21:13
品牌 Logo 应用领域
其他 - ETC 晶体晶体管开关光电二极管
页数 文件大小 规格书
3页 65K
描述
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-363

XP06213 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G6
针数:6Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.83Is Samacsys:N
其他特性:BUILT IN BIAS RESISTOR RATIO IS 1最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):80JESD-30 代码:R-PDSO-G6
JESD-609代码:e6湿度敏感等级:1
元件数量:2端子数量:6
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):0.15 W
认证状态:Not Qualified子类别:BIP General Purpose Small Signal
表面贴装:YES端子面层:Tin/Bismuth (Sn/Bi)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):150 MHz
Base Number Matches:1

XP06213 数据手册

 浏览型号XP06213的Datasheet PDF文件第2页浏览型号XP06213的Datasheet PDF文件第3页 
Composite Transistors  
XP06213 (XP6213)  
Silicon NPN epitaxial planer transistor  
Unit: mm  
For switching/digital circuits  
2.1 0.1  
0.425  
1.25 0.1  
0.425  
1
6
Features  
I
G
2
3
5
4
Two elements incorporated into one package.  
(Transistors with built-in resistor)  
G
Reduction of the mounting area and assembly cost by one half.  
Basic Part Number of Element  
UNR1213(UN1213) × 2 elements  
I
G
0.2 0.1  
1 : Emitter (Tr1)  
2 : Emitter (Tr2)  
3 : Base (Tr2)  
4 : Collector (Tr2)  
5 : Base (Tr1)  
6 : Collector (Tr1)  
EIAJ : SC–88  
Absolute Maximum Ratings (Ta=25˚C)  
I
Parameter  
Symbol  
VCBO  
VCEO  
IC  
Ratings  
Unit  
V
S–Mini Type Package (6–pin)  
Collector to base voltage  
Collector to emitter voltage  
Collector current  
Total power dissipation  
50  
50  
Rating  
V
of  
Marking Symbol: 8W  
Internal Connection  
element  
100  
mA  
mW  
˚C  
PT  
150  
Overall Junction temperature  
Storage temperature  
Tj  
150  
Tr1  
1
6
5
4
Tstg  
–55 to +150  
˚C  
2
3
Tr2  
Electrical Characteristics (Ta=25˚C)  
I
Parameter  
Symbol  
VCBO  
Conditions  
min  
50  
typ  
max  
Unit  
V
Collector to base voltage  
IC = 10µA, IE = 0  
Collector to emitter voltage  
VCEO  
ICBO  
ICEO  
IEBO  
hFE  
IC = 2mA, IB = 0  
VCB = 50V, IE = 0  
VCE = 50V, IB = 0  
VEB = 6V, IC = 0  
VCE = 10V, IC = 5mA  
50  
V
0.1  
0.5  
0.1  
µA  
µA  
mA  
Collector cutoff current  
Emitter cutoff current  
Forward current transfer ratio  
Forward current transfer hFE ratio  
80  
hFE (small/large)*1 VCE = 10V, IC = 5mA  
0.5  
0.99  
Collector to emitter saturation voltage VCE(sat)  
IC = 10mA, IB = 0.3mA  
0.25  
0.2  
V
V
Output voltage high level  
Output voltage low level  
Transition frequency  
Input resistance  
VOH  
VOL  
fT  
VCC = 5V, VB = 0.5V, RL = 1kΩ  
VCC = 5V, VB = 3.5V, RL = 1kΩ  
VCB = 10V, IE = –2mA, f = 200MHz  
4.9  
V
150  
47  
MHz  
kΩ  
R1  
–30%  
0.8  
+30%  
1.2  
Resistance ratio  
R1/R2  
1.0  
*1 Ratio between 2 elements  
Note.) The Part number in the Parenthesis shows conventional part number.  
1

与XP06213相关器件

型号 品牌 获取价格 描述 数据表
XP06213(XP6213) ETC

获取价格

Composite Device - Composite Transistors
XP06213|XP6213 ETC

获取价格

Composite Device - Composite Transistors
XP06214 PANASONIC

获取价格

Silicon NPN epitaxial planer transistor
XP06214(XP6214) ETC

获取价格

Composite Device - Composite Transistors
XP06214|XP6214 PANASONIC

获取价格

Composite Device - Composite Transistors
XP06215 ETC

获取价格

TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-363
XP06215(XP6215) ETC

获取价格

複合デバイス - 複合トランジスタ
XP06215|XP6215 ETC

获取价格

Composite Device - Composite Transistors
XP06216 ETC

获取价格

TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-363
XP06216(XP6216) ETC

获取价格

複合デバイス - 複合トランジスタ