Datasheet > XP06216

XP06216

更新时间： 2024-11-29 23:33:55

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
3页	64K
描述
TRANSISTOR \| 50V V(BR)CEO \| 100MA I(C) \| SOT-363

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数据手册

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XP06216 数据手册

Composite Transistors

XP06216 (XP6216)

Silicon NPN epitaxial planer transistor

Unit: mm

For switching/digital circuits

2.1 0.1

0.425

1.25 0.1

0.425

Features

Two elements incorporated into one package.

(Transistors with built-in resistor)

Reduction of the mounting area and assembly cost by one half.

Basic Part Number of Element

UNR1216(UN1216) × 2 elements

0.2 0.1

1 : Emitter (Tr1)

2 : Emitter (Tr2)

3 : Base (Tr2)

4 : Collector (Tr2)

5 : Base (Tr1)

6 : Collector (Tr1)

EIAJ : SC–88

Absolute Maximum Ratings (Ta=25˚C)

Parameter

Symbol

V_CBO

V_CEO

I_C

Ratings

Unit

S–Mini Type Package (6–pin)

Collector to base voltage

Collector to emitter voltage

Collector current

Total power dissipation

Rating

Marking Symbol: 8Y

Internal Connection

element

100

˚C

P_T

150

Overall Junction temperature

Storage temperature

T_j

150

Tr1

T_stg

–55 to +150

˚C

Tr2

Electrical Characteristics (Ta=25˚C)

Parameter

Symbol

V_CBO

Conditions

min

typ

max

Unit

Collector to base voltage

I_C= 10µA, I_E= 0

Collector to emitter voltage

V_CEO

I_CBO

I_CEO

I_EBO

h_FE

I_C= 2mA, I_B= 0

V_CB= 50V, I_E= 0

V_CE= 50V, I_B= 0

V_EB= 6V, I_C= 0

V_CE= 10V, I_C= 5mA

0.1

0.5

µA

Collector cutoff current

Emitter cutoff current

0.01

460

Forward current transfer ratio

Forward current transfer h_FEratio

160

0.5

h_FE(small/large)^*1V_CE= 10V, I_C= 5mA

0.99

Collector to emitter saturation voltage V_CE(sat)

I_C= 10mA, I_B= 0.3mA

0.25

0.2

Output voltage high level

Output voltage low level

Transition frequency

V_OH

V_OL

f_T

V_CC= 5V, V_B= 0.5V, R_L= 1kΩ

V_CC= 5V, V_B= 2.5V, R_L= 1kΩ

V_CB= 10V, I_E= –2mA, f = 200MHz

4.9

150

4.7

MHz

kΩ

Input resistance

R₁

–30%

+30%

^*1Ratio between 2 elements

Note.) The Part number in the Parenthesis shows conventional part number.

12 3

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