Composite Transistors
XP06113 (XP6113)
Silicon PNP epitaxial planer transistor
Unit: mm
For switching/digital circuits
2.1 0.1
0.425
1.25 0.1
0.425
1
6
Features
I
G
2
3
5
4
Two elements incorporated into one package.
(Transistors with built-in resistor)
G
Reduction of the mounting area and assembly cost by one half.
Basic Part Number of Element
UNR1113(UN1113) × 2 elements
I
G
0.2 0.1
1 : Emitter (Tr1)
2 : Emitter (Tr2)
3 : Base (Tr2)
4 : Collector (Tr2)
5 : Base (Tr1)
6 : Collector (Tr1)
EIAJ : SC–88
Absolute Maximum Ratings (Ta=25˚C)
I
Parameter
Symbol
VCBO
VCEO
IC
Ratings
–50
Unit
V
S–Mini Type Package (6–pin)
Collector to base voltage
Collector to emitter voltage
Collector current
Total power dissipation
Rating
of
–50
V
Marking Symbol: 6W
Internal Connection
element
–100
mA
mW
˚C
PT
150
Overall Junction temperature
Storage temperature
Tj
150
Tr1
1
6
5
4
Tstg
–55 to +150
˚C
2
3
Tr2
Electrical Characteristics (Ta=25˚C)
I
Parameter
Symbol
VCBO
Conditions
min
–50
–50
typ
max
Unit
V
Collector to base voltage
IC = –10µA, IE = 0
Collector to emitter voltage
VCEO
ICBO
ICEO
IEBO
hFE
IC = –2mA, IB = 0
VCB = –50V, IE = 0
VCE = –50V, IB = 0
VEB = –6V, IC = 0
V
– 0.1
– 0.5
– 0.1
µA
µA
mA
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Forward current transfer hFE ratio
VCE = –10V, IC = –5mA
80
hFE (small/large)*1 VCE = –10V, IC = –5mA
0.5
0.99
Collector to emitter saturation voltage VCE(sat)
IC = –10mA, IB = – 0.3mA
– 0.25
– 0.2
V
V
Output voltage high level
Output voltage low level
Transition frequency
Input resistance
VOH
VOL
fT
VCC = –5V, VB = – 0.5V, RL = 1kΩ
VCC = –5V, VB = –3.5V, RL = 1kΩ
VCB = –10V, IE = 1mA, f = 200MHz
–4.9
V
80
47
MHz
kΩ
R1
–30%
0.8
+30%
1.2
Resistance ratio
R1/R2
1.0
*1 Ratio between 2 elements
Note.) The Part number in the Parenthesis shows conventional part number.
1