Composite Transistors
XP06113 (XP6113)
Silicon PNP epitaxial planar transistor
Unit: mm
+0.05
0.12
–0.02
For switching/digital circuits
0.2 0.05
5
6
4
3
■ Features
• Two elements incorporated into one package
(Transistors with built-in resistor)
1
2
• Reduction of the mounting area and assembly cost by one half
(0.65) (0.65)
1.3 0.1
2.0 0.1
■ Basic Part Number
10˚
•
UNR2113 (UN2113) × 2
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
−50
Unit
V
1: Emitter (Tr1)
2: Emitter (Tr2)
3: Base (Tr2)
4: Collector (Tr2)
5: Base (Tr1)
6: Collector (Tr1)
SMini6-G1 Package
Collector-base voltage (Emitter open) VCBO
Collector-emitter voltage (Base open) VCEO
−50
V
EIAJ : SC-88
Collector current
IC
PT
Tj
−100
mA
mW
°C
Marking Symbol: 6W
Total power dissipation
Junction temperature
Storage temperature
150
150
Internal Connection
Tstg
−55 to +150
°C
6
5
4
Tr2
Tr1
1
2
3
■ Electrical Characteristics Ta = 25°C 3°C
Parameter
Symbol
VCBO
VCEO
ICBO
Conditions
Min
−50
−50
Typ
Max
Unit
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Output voltage high-level
IC = −10 µA, IE = 0
V
V
IC = −2 mA, IB = 0
VCB = −50 V, IE = 0
VCE = −50 V, IB = 0
VEB = −6 V, IC = 0
VCE = −10 V, IC = −5 mA
− 0.1
− 0.5
− 0.1
µA
µA
mA
ICEO
IEBO
hFE
80
VCE(sat) IC = −10 mA, IB = − 0.3 mA
− 0.25
V
VOH
VOL
R1
VCC = −5 V, VB = − 0.5 V, RL = 1 kΩ
−4.9
V
Output voltage low-level
VCC = −5 V, VB = −3.5 V, RL = 1 kΩ
− 0.2
+30%
1.2
V
Input resistance
−30%
47
1.0
80
kΩ
Resistance ratio
R1 / R2
fT
0.8
Transition frequency
VCB = −10 V, IE = 1 mA, f = 200 MHz
MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Note) The part number in the parenthesis shows conventional part number.
Publication date: June 2003
SJJ00200BED
1