Datasheet > XP04683|XP4683

XP04683|XP4683

更新时间： 2024-11-29 23:33:51

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
6页	132K
描述
Composite Device - Composite Transistors

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中文翻译

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数据手册

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XP04683|XP4683 数据手册

Composite Transistors

XP04683 (XP4683)

Silicon NPN epitaxial planar type (Tr1)

Silicon PNP epitaxial planar type (Tr2)

Unit: mm

+0.05

For high-frequency amplification (Tr1)

For general amplification (Tr2)

0.12

–0.02

0.2 0.05

■ Features

• Two elements incorporated into one package

• Reduction of the mounting area and assembly cost by one half

(0.65) (0.65)

1.3 0.1

2.0 0.1

10˚

■ Basic Part Number

• 2SC2404 + 2SB0709A (2SB709A)

■ Absolute Maximum Ratings T_a= 25°C

1: Emitter (Tr1)

2: Base (Tr1)

4: Emitter (Tr2)

5: Base (Tr2)

Parameter

Symbol

Rating

Unit

Tr1

Collector-base voltage

(Emitter open)

V_CBO

3: Collector (Tr2)

EIAJ: SC-88

6: Collector (Tr1)

SMini6-G1 Package

Collector-emitter voltage

(Base open)

V_CEO

V_EBO

Marking Symbol: ER

Internal Connection

Emitter-base voltage

(Collector open)

Collector current

I_C

Tr2

Collector-base voltage

(Emitter open)

V_CBO

−60

Tr1

Tr2

Collector-emitter voltage

(Base open)

V_CEO

V_EBO

−50

−7

Emitter-base voltage

(Collector open)

Collector current

I_C

I_CP

P_T

−100

−200

°C

Peak collector current

Overall Total power dissipation

Junction temperature

150

T_j

150

Storage temperature

T_stg

−55 to +150

°C

Note) The part number in the parenthesis shows conventional part number.

Publication date: February 2004

SJJ00189BED

12 3 4 5 6

中文翻译

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