5秒后页面跳转
XP0497A PDF预览

XP0497A

更新时间: 2024-11-30 19:33:59
品牌 Logo 应用领域
松下 - PANASONIC 开关光电二极管晶体管
页数 文件大小 规格书
4页 419K
描述
Small Signal Field-Effect Transistor, 0.1A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SMINI6-G1, 6 PIN

XP0497A 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G6
针数:6Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.82配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (ID):0.1 A
最大漏源导通电阻:15 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G6JESD-609代码:e6
湿度敏感等级:1元件数量:2
端子数量:6工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL AND P-CHANNEL认证状态:Not Qualified
表面贴装:YES端子面层:Tin/Bismuth (Sn/Bi)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

XP0497A 数据手册

 浏览型号XP0497A的Datasheet PDF文件第2页浏览型号XP0497A的Datasheet PDF文件第3页浏览型号XP0497A的Datasheet PDF文件第4页 
This product complies with the RoHS Directive (EU 2002/95/EC).  
Silicon MOSFETs (Small Signal)  
XP0497A  
Silicon N-channel MOSFET (FET1)  
Silicon P-channel MOSFET (FET2)  
For switching circuits  
Package  
Features  
Code  
Two elements incorporated into one package (MOSFET)  
Incorporating a built-in gate protection-diode  
Downsizing of the equipment and costs can be reduced through reduction o
the number of parts  
SMini6-G1  
Marking Symbol: 4E  
Pin Name  
e (FET1)  
ET1)  
3. Drain (FET2)  
4. Source (FET2)  
5. Gate (FET2)  
6. Drain (FET1)  
Basic Part Number  
2SJ0674 + 2SK3938  
Internal Connection  
Absolute Maximum Ratings Ta = 25°C  
(D1) (G2)  
(S2)  
4
Parameter  
Sybol  
DSS  
VGS
ID  
Rating  
30  
Unit  
V
6
5
Drain-source surrender voltage  
Gate-source surrender vlage  
Drain current  
FET1  
V
±
FET1  
FET2  
100  
mA  
mA  
V
FET2  
Peak drain curre
IDP  
200  
Drain-source surendevoltage  
Gate-surce ender voltage  
Drin cur
V
VGS
ID  
0  
1
2
3
(S1)  
(G1) (D2)  
V
±12  
–100  
–200  
150  
mA  
mA  
mW  
°C  
Pek drin current  
IP  
Totpower dissipation  
PT  
Overall Channere  
Storage
T
ch  
150  
T
stg  
- 55 to +150  
°C  
Publication date: June 2007  
SJF00058AED  
1

与XP0497A相关器件

型号 品牌 获取价格 描述 数据表
XP05501 ETC

获取价格

TRANSISTOR | BJT | PAIR | NPN | 50V V(BR)CEO | 100MA I(C) | SOT-363
XP05501(XP5501) ETC

获取价格

複合デバイス - 複合トランジスタ
XP05501|XP5501 ETC

获取价格

Composite Device - Composite Transistors
XP05531 PANASONIC

获取价格

Silicon NPN epitaxial planer transistor
XP05534 ETC

获取价格

複合デバイス - 複合トランジスタ
XP05543 PANASONIC

获取价格

RF Small Signal Bipolar Transistor, 0.065A I(C), 2-Element, L Band, Silicon, NPN, SC-88, 6
XP05553 PANASONIC

获取价格

Small Signal Bipolar Transistor, 0.02A I(C), 100V V(BR)CEO, 2-Element, NPN, Silicon, ROHS
XP05553(XP5553) ETC

获取价格

複合デバイス - 複合トランジスタ
XP05553|XP5553 ETC

获取价格

Composite Device - Composite Transistors
XP05554 PANASONIC

获取价格

Silicon NPN epitaxial planer transistor