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XP04683(XP4683) PDF预览

XP04683(XP4683)

更新时间: 2024-02-21 18:34:11
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其他 - ETC 晶体晶体管
页数 文件大小 规格书
3页 83K
描述
Composite Device - Composite Transistors

XP04683(XP4683) 数据手册

 浏览型号XP04683(XP4683)的Datasheet PDF文件第2页浏览型号XP04683(XP4683)的Datasheet PDF文件第3页 
Composite Transistors  
XP04878  
Silicon N-channel MOSFET  
Unit: mm  
+0.05  
0.12  
–0.02  
0.2 0.05  
For switching  
5
6
4
3
Features  
Allowing 2.5 V drive  
1
2
Incorporating a built-in gate protection-diode  
S-Mini type 6-pin package, reduction of the mounting area and  
assembly cost by one half  
(0.65) (0.65)  
1.3 0.1  
2.0 0.1  
10˚  
Basic Part Number  
2SK3539 × 2  
1: Source (FET1)  
2: Gate (FET1)  
3: Drain (FET2)  
EIAJ: SC-88  
4: Source (FET2)  
5: Gate (FET2)  
6: Drain (FET1)  
Absolute Maximum Ratings Ta = 25°C  
Parameter  
Drain-source surrender voltage  
Gate-source voltage (Drain open)  
Drain current  
Symbol  
VDSS  
VGSO  
ID  
Rating  
Unit  
V
SMini6-G1 Package  
50  
7
Marking Symbol: 7Y  
V
100  
mA  
mA  
mW  
°C  
Internal Connection  
Peak drain current  
IDP  
200  
6
1
5
4
3
Total power dissipation  
Channel temperature  
Storage temperature  
PT  
150  
Tch  
150  
Tstg  
55 to +150  
°C  
2
Electrical Characteristics Ta = 25°C 3°C  
Parameter  
Symbol  
VDSS  
IDSS  
Conditions  
Min  
Typ  
Max  
Unit  
V
Drain-source surrender voltage  
Drain-source cutoff current  
Gate-source cutoff current  
Gate threshold voltage  
ID = 10 µA, VGS = 0  
VDS = 50 V, VGS = 0  
VGS 7 V, VDS = 0  
50  
0.9  
20  
1.0  
5
µA  
µA  
V
IGSS  
=
Vth  
ID = 1 µA, VDS = 3 V  
1.2  
8
1.5  
15  
12  
Drain-source ON resistance  
RDS(on)  
ID = 10 mA, VGS = 2.5 V  
ID = 10 mA, VGS = 4.0 V  
ID = 10 mA, VGS = 4.0 V  
VDS = 3 V, VGS = 0 V, f = 1 MHz  
6
Forward transfer admittance  
Yfs  
60  
12  
mS  
pF  
Short-circuit forward transfer  
capacitance (Common-source)  
Ciss  
Short-circuit output capacitance  
(Common-source)  
Coss  
Crss  
7
3
pF  
pF  
Reverse transfer capacitance  
(Common-source)  
Turn-on time  
Turn-off time  
ton  
VDD = 3 V, VGS = 0 V to 3 V, RL = 470 Ω  
VDD = 3 V, VGS = 3 V to 0 V, RL = 470 Ω  
200  
200  
ns  
ns  
toff  
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.  
Publication date: December 2003  
SJJ00263BED  
1

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