Composite Transistors
XP04601 (XP4601)
Silicon NPN epitaxial planar type (Tr1)
Silicon PNP epitaxial planar type (Tr2)
Unit: mm
+0.05
For general amplification
0.12
–0.02
0.2 0.05
5
6
4
3
■ Features
• Two elements incorporated into one package
• Reduction of the mounting area and assembly cost by one half
1
2
(0.65) (0.65)
1.3 0.1
2.0 0.1
■ Basic Part Number
• 2SD0601A (2SD601A) + 2SB0709A (2SB709A)
10˚
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
1: Emitter (Tr1)
2: Base (Tr1)
3: Collector (Tr2)
EIAJ: SC-88
4: Emitter (Tr2)
5: Base (Tr2)
6: Collector (Tr1)
SMini6-G1 Package
Tr1
Collector-base voltage
(Emitter open)
VCBO
60
V
Collector-emitter voltage
(Base open)
VCEO
VEBO
50
7
V
V
Marking Symbol: 5C
Internal Connection
Emitter-base voltage
(Collector open)
Collector current
IC
ICP
100
200
−60
mA
mA
V
6
5
4
Peak collector current
Tr2
Collector-base voltage
(Emitter open)
VCBO
Tr1
Tr2
3
Collector-emitter voltage
(Base open)
VCEO
VEBO
−50
−7
V
V
1
2
Emitter-base voltage
(Collector open)
Collector current
IC
ICP
PT
−100
−200
mA
mA
mW
°C
Peak collector current
Overall Total power dissipation
Junction temperature
150
Tj
150
Storage temperature
Tstg
−55 to +150
°C
Note) The part number in the parenthesis shows conventional part number.
Publication date: February 2004
SJJ00187BED
1