Datasheet > XP04313|XP4313

XP04313|XP4313

更新时间： 2024-09-18 23:33:51

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
5页	110K
描述
Composite Device - Composite Transistors

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中文翻译

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数据手册

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XP04313|XP4313 数据手册

Composite Transistors

XP04313 (XP4313)

Silicon NPN epitaxial planar type (Tr1)

Silicon PNP epitaxial planar type (Tr2)

Unit: mm

+0.05

For switching/digital circuits

0.12

–0.02

0.2 0.05

■ Features

• Two elements incorporated into one package

(Transistors with built-in resistor)

• Reduction of the mounting area and assembly cost by one half

(0.65) (0.65)

1.3 0.1

2.0 0.1

■ Basic Part Number

• UNR2213 (UN2213) + UNR2113 (UN2113)

10˚

■ Absolute Maximum Ratings T_a= 25°C

Parameter

Symbol

Rating

Unit

Tr1

Tr2

Collector-base voltage

(Emitter open)

V_CBO

1: Emitter (Tr1)

2: Base (Tr1)

3: Collector (Tr2)

EIAJ: SC-88

4: Emitter (Tr2)

5: Base (Tr2)

6: Collector (Tr1)

SMini6-G1 Package

Collector-emitter voltage

(Base open)

V_CEO

Collector current

I_C

100

Marking Symbol: BZ

Internal Connection

Collector-base voltage

(Emitter open)

V_CBO

−50

Collector-emitter voltage

(Base open)

V_CEO

−50

Collector current

I_C

P_T

T_j

−100

150

°C

Tr1

Overall Total power dissipation

Junction temperature

Tr2

150

Storage temperature

T_stg

−55 to +150

°C

Note) The part number in the parenthesis shows conventional part number.

Publication date: June 2003

SJJ00178CED

12 3 4 5

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