Datasheet > XP0421M

XP0421M

更新时间： 2024-09-18 23:33:51

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关光电二极管
页数	文件大小	规格书
3页	56K
描述
Composite Device - Composite Transistors

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数据手册

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XP0421M 数据手册

Composite Transistors

XP0421M

Silicon NPN epitaxial planar transistor

Unit: mm

+0.05

–0.02

0.12

For digital circuits/switching

0.2±0.05

■ Features

• Two elements incorporated into one package (Transistors with

built-in resistor)

• Reduction of the mounting area and assembly cost by one half

(0.65) (0.65)

1.3±0.1

2.0±0.1

■ Basic Part Number of Element

10˚

•

UNR121M (UN121M) × 2 elements

■ Absolute Maximum Ratings T_a= 25°C

Parameter

Symbol

V_CBO

V_CEO

I_C

Rating

Unit

1: Emitter (Tr1)

2: Base (Tr1)

3: Collector (Tr2)

EIAJ: SC-88

4: Emitter (Tr2)

5: Base (Tr2)

6: Collector (Tr1)

Rating

Collector to base voltage

Collector to emitter voltage

SMini6-G1 Package

element Collector current

Total Total power dissipation

100

°C

Marking Symbol: FH

P_T

150

Junction temperature

Storage temperature

T_j

150

Internal Connection

T_stg

−55 to +150

°C

Tr1

Tr2

■ Electrical Characteristics T_a= 25°C ± 3°C

Parameter

Collector to base voltage

Collector to emittter voltage

Collector cutoff current

Symbol

V_CBO

V_CEO

I_CBO

I_CEO

Conditions

Min

Typ

Max

Unit

_C= 10 µA, I_E= 0

_C= 2 mA, I_B= 0

_CB= 50 V, I_E= 0

_CE= 50 V, I_B= 0

_EB= 6 V, I_C= 0

0.1

0.5

0.2

µA

Emitter cutoff current

DC current gain

I_EBO

h_FE

_CE= 10 V, I_C= 5 mA

4.9

Collector to emitter saturation voltage

High level output voltage

Low level output voltage

Input resistance

V_CE(sat)

V_OH

_C= 10 mA, I_B= 0.3 mA

0.25

_CC= 5 V, V_B= 0.5 V, R_L= 1 kΩ

_CC= 5 V, V_B= 2.5 V, R_L= 1 kΩ

V_OL

0.2

R₁

−30%

2.2

0.047

150

+30%

kΩ

Resistance ratio

R₁/ R₂

f_T

Gain bandwidth product

_CB= 10 V, I_E= −2 mA, f = 200 MHz

MHz

Note) The part number in the parenthesis shows conventional part number.

Publication date: May 2002

SJJ00174AED

12 3

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