Datasheet > XP0411M

XP0411M

更新时间： 2024-11-09 23:33:47

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关光电二极管
页数	文件大小	规格书
3页	82K
描述
Composite Device - Composite Transistors

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中文翻译

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XP0411M 数据手册

Composite Transistors

XP0411M (XP411M)

Silicon PNP epitaxial planar transistor

Unit: mm

+0.05

For digital circuits

0.12

–0.02

0.2 ^0.05

■ Features

• Two elements incorporated into one package (Transistors with

built-in resistor)

• Reduction of the mounting area and assembly cost by one half

(0.65) (0.65)

1.3 0.1

2.0 0.1

■ Basic Part Number of Element

• UNR111M (UN111M) × 2 elements

10˚

■ Absolute Maximum Ratings T_a= 25°C

Parameter

Symbol

V_CBO

V_CEO

I_C

Rating

−50

Unit

1: Emitter (Tr1)

2: Base (Tr1)

3: Collector (Tr2)

EIAJ: SC-88

4: Emitter (Tr2)

5: Base (Tr2)

6: Collector (Tr1)

SMini6-G1 Package

Rating

Collector to base voltage

Collector to emitter voltage

−50

element Collector current

Total power dissipation

Junction temperature

Storage temperature

−100

°C

Marking Symbol: EA

P_T

150

Total

T_j

150

Internal Connection

T_stg

−55 to +150

°C

Tr1

Tr2

■ Electrical Characteristics T_a= 25°C 3°C

Parameter

Collector to base voltage

Collector to emittter voltage

Collector cutoff current

Symbol

V_CBO

V_CEO

I_CBO

I_CEO

Conditions

Min

−50

Typ

Max

Unit

I_C= −10 µA, I_E= 0

I_C= −2 mA, I_B= 0

V_CB= −50 V, I_E= 0

V_CE= −50 V, I_B= 0

V_EB= −6 V, I_C= 0

− 0.1

− 0.5

− 0.2

µA

Emitter cutoff current

DC current gain

I_EBO

h_FE

V_CE= −10 V, I_C= −5 mA

I_C= −10 mA, I_B= − 0.3 mA

Collector to emitter saturation voltage

High level output voltage

Low level output voltage

Input resistance

V_CE(sat)

V_OH

− 0.25

V_CC= −5 V, V_B= − 0.5 V, R_L= 1 kΩ −4.9

V_CC= −5 V, V_B= −2.5 V, R_L= 1 kΩ

−30%

V_OL

− 0.2

R₁

2.2

0.047

+30%

kΩ

Resistance ratio

R₁/ R₂

f_T

Gain bandwidth product

V_CB= −10 V, I_E= 1 mA, f = 200 MHz

MHz

Note) The part number in the parenthesis shows conventional part number.

Publication date: July 2002

SJJ00239BED

12 3

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