Datasheet > XP02401|XP2401

XP02401|XP2401

更新时间： 2024-09-18 23:33:47

品牌	Logo	应用领域
松下 - PANASONIC		晶体晶体管
页数	文件大小	规格书
4页	103K
描述
Composite Device - Composite Transistors

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

XP02401|XP2401 数据手册

Composite Transistors

XP02401 (XP2401)

Silicon PNP epitaxial planar type

Unit: mm

+0.05

–0.02

0.12

For general amplification

0.20 0.05

■ Features

• Two elements incorporated into one package

(Base-coupled transistors)

• Reduction of the mounting area and assembly cost by one half

(0.65) (0.65)

1.3 0.1

2.0 0.1

■ Basic Part Number

• 2SB0709A (2SB709A) × 2

10˚

■ Absolute Maximum Ratings T_a= 25°C

Parameter

Symbol

Rating

Unit

1: Emitter (Tr1)

2: Base

3: Emitter (Tr2)

EIAJ: SC-88A

4: Collector (Tr2)

5: Collector (Tr1)

Collector-base voltage (Emitter open) V_CBO

Collector-emitter voltage (Base open) V_CEO

Emitter-base voltage (Collector open) V_EBO

−60

−50

−7

SMini5-G1 Package

Collector current

I_C

I_CP

P_T

−100

−200

°C

Marking Symbol: 7R

Peak collector current

Total power dissipation

Junction temperature

Storage temperature

Internal Connection

150

T_j

150

T_stg

−55 to +150

°C

Tr1

Tr2

■ Electrical Characteristics T_a= 25°C 3°C

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_CBO

Conditions

Min

−60

−50

−7

Typ

Max

Unit

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Emitter-base voltage (Collector open)

Collector-base cutoff current (Emitter open)

Collector-emitter cutoff current (Base open)

Forward current transfer ratio

h_FEratio ^*

I_C= −10 µA, I_E= 0

I_C= −2 mA, I_B= 0

I_E= −10 µA, I_C= 0

V_CB= −20 V, I_E= 0

V_CE= −10 V, I_B= 0

V_CE= −10 V, I_C= −2 mA

− 0.1

−100

460

µA



I_CEO

h_FE

160

h_FE(Small/V_CE= −10 V, I_C= −2 mA

Large)

0.50

0.99

Collector-emitter saturation voltage

Transition frequency

V_CE(sat)I_C= −100 mA, I_B= −10 mA

− 0.3 − 0.5

MHz

f_T

V_CB= −10 V, I_E= 1 mA, f = 200 MHz

V_CB= −10 V, I_E= 0, f = 1 MHz

Collector output capacitance

C_ob

2.7

(Common base, input open circuited)

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. : Ratio between 2 elements

Note) The part number in the parenthesis shows conventional part number.

Publication date: February 2004

SJJ00155BED

12 3 4

中文翻译

下载PDF

与XP02401|XP2401相关器件

型号	品牌	获取价格	描述	数据表
XP0240100L	PANASONIC	获取价格	Silicon PNP epitaxial planar type
XP02501	PANASONIC	获取价格	Silicon NPN epitaxial planar type
XP02501(XP2501)	ETC	获取价格	複合デバイス－複合トランジスタ
XP02501\|XP2501	ETC	获取价格	Composite Device - Composite Transistors
XP03311	PANASONIC	获取价格	Silicon NPN(PNP) epitaxial planer transistor
XP03312	PANASONIC	获取价格	Silicon NPN(PNP) epitaxial planer transistor
XP03312_13	PANASONIC	获取价格	Silicon NPN epitaxial planar type Tr1 Silicon PNP epitaxial planar type Tr2
XP03316	PANASONIC	获取价格	Silicon NPN epitaxial planar type
XP03383	PANASONIC	获取价格	Silicon NPN(PNP) epitaxial planer transistor
XP03389	PANASONIC	获取价格	Silicon NPN epitaxial planar type