Datasheet > XP03312

XP03312

更新时间： 2024-09-18 22:11:19

品牌	Logo	应用领域
松下 - PANASONIC		晶体晶体管
页数	文件大小	规格书
4页	54K
描述
Silicon NPN(PNP) epitaxial planer transistor

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数据手册

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XP03312 数据手册

Composite Transistors

XP03312

Silicon NPN epitaxial planer transistor (Tr1)

Silicon PNP epitaxial planer transistor (Tr2)

Unit: mm

2.1±0.1

For switching/digital circuits

1.25±0.1

0.425

Features

■

●

Two elements incorporated into one package.

(Transistors with built-in resistor, Tr1 collecter is connected to

Tr2 base.)

●

Reduction of the mounting area and assembly cost by one half.

Basic Part Number of Element

UN1212+UN1112

■

0.2±0.1

●

1 : Emitter(Tr1)

2 : Base(Tr1)

3 : Emitter(Tr2)

4 : Collector(Tr2)

5 : Collector(Tr1)

Base(Tr2)

Absolute Maximum Ratings (Ta=25˚C)

■

EIAJ : SC–88A

S–Mini Type Package (5–pin)

Parameter

Symbol

V_CBO

V_CEO

I_C

Ratings

Unit

Collector to base voltage

Collector to emitter voltage

Collector current

Collector to base voltage

Collector to emitter voltage

Collector current

Total power dissipation

Junction temperature

Storage temperature

Marking Symbol: 4P

Internal Connection

Tr1

100

V_CBO

V_CEO

I_C

–50

Tr1

Tr2

–50

–100

150

˚C

P_T

Overall

T_j

150

Tr2

T_stg

–55 to +150

˚C

12 3 4

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