Composite Transistors
XP03390
Silicon NPN epitaxial planar transistor (Tr1)
Silicon PNP epitaxial planar transistor (Tr2)
Unit: mm
+0.05
0.12
For digital circuits
–0.02
0.20 0.05
5
4
3
I Features
•
Two elements incorporated into one package
(Transistors with built-in resistor)
1
2
• Reduction of the mounting area and assembly cost by one half
(0.65) (0.65)
1.3 0.1
2.0 0.1
I Basic Part Number of Element
10˚
•
UNR1213 (UN1213) + UNR1114 (UN1114)
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
VCBO
VCEO
IC
Rating
50
Unit
V
1: Emitter (Tr1)
2: Base (Tr1)
3: Emitter (Tr2)
EIAJ: SC-88A
4: Collector (Tr2)
5: Collector (Tr1)
: Base (Tr2)
Collector to base voltage
Collector to emitter voltage
Collector current
Tr1
50
V
SMini5-G1 Package
100
mA
V
Collector to base voltage
Collector to emitter voltage
Collector current
VCBO
VCEO
IC
−50
Marking Symbol: EX
Tr2
−50
V
Internal Connection
−100
150
mA
mW
°C
°C
5
4
Total power dissipation
Junction temperature
Storage temperature
PT
Total
Tj
150
Tstg
−55 to +150
Tr1
Tr2
3
1
2
I Electrical Characteristics Ta = 25°C 3°C
• Tr1
Parameter
Collector to base voltage
Collector to emitter voltage
Collector cutoff current
Symbol
VCBO
VCEO
ICBO
ICEO
IEBO
hFE
Conditions
Min
Typ
Max
Unit
V
IC = 10 µA, IE = 0
50
50
IC = 2 mA, IB = 0
V
VCB = 50 V, IE = 0
0.1
0.5
0.1
µA
VCE = 50 V, IB = 0
Emitter cutoff current
DC current gain
VEB = 6 V, IC = 0
mA
VCE = 10 V, IC = 5 mA
IC = 10 mA, IB = 0.3 mA
VCC = 5 V, VB = 0.5 V, RL = 1 kΩ
VCC = 5 V, VB = 3.5 V, RL = 1 kΩ
80
Collector to emitter saturation voltage
High-level output voltage
Low-level output voltage
Input resistance
VCE(sat)
VOH
VOL
0.25
V
V
4.9
0.2
+30%
1.2
V
R1
−30%
47
1.0
150
kΩ
Resistance ratio
R1/R2
fT
0.8
Gain bandwidth product
VCB = 10 V, IE = −2 mA, f = 200MHz
MHz
Note) The part number in the parenthesis shows conventional part number.
Publication date: May 2002
SJJ00236AED
1