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XP03390 PDF预览

XP03390

更新时间: 2024-09-18 23:33:47
品牌 Logo 应用领域
其他 - ETC 晶体晶体管开关光电二极管
页数 文件大小 规格书
4页 87K
描述
Composite Device - Composite Transistors

XP03390 数据手册

 浏览型号XP03390的Datasheet PDF文件第2页浏览型号XP03390的Datasheet PDF文件第3页浏览型号XP03390的Datasheet PDF文件第4页 
Composite Transistors  
XP03390  
Silicon NPN epitaxial planar transistor (Tr1)  
Silicon PNP epitaxial planar transistor (Tr2)  
Unit: mm  
+0.05  
0.12  
For digital circuits  
–0.02  
0.20 0.05  
5
4
3
I Features  
Two elements incorporated into one package  
(Transistors with built-in resistor)  
1
2
Reduction of the mounting area and assembly cost by one half  
(0.65) (0.65)  
1.3 0.1  
2.0 0.1  
I Basic Part Number of Element  
10˚  
UNR1213 (UN1213) + UNR1114 (UN1114)  
I Absolute Maximum Ratings Ta = 25°C  
Parameter  
Symbol  
VCBO  
VCEO  
IC  
Rating  
50  
Unit  
V
1: Emitter (Tr1)  
2: Base (Tr1)  
3: Emitter (Tr2)  
EIAJ: SC-88A  
4: Collector (Tr2)  
5: Collector (Tr1)  
: Base (Tr2)  
Collector to base voltage  
Collector to emitter voltage  
Collector current  
Tr1  
50  
V
SMini5-G1 Package  
100  
mA  
V
Collector to base voltage  
Collector to emitter voltage  
Collector current  
VCBO  
VCEO  
IC  
50  
Marking Symbol: EX  
Tr2  
50  
V
Internal Connection  
100  
150  
mA  
mW  
°C  
°C  
5
4
Total power dissipation  
Junction temperature  
Storage temperature  
PT  
Total  
Tj  
150  
Tstg  
55 to +150  
Tr1  
Tr2  
3
1
2
I Electrical Characteristics Ta = 25°C 3°C  
Tr1  
Parameter  
Collector to base voltage  
Collector to emitter voltage  
Collector cutoff current  
Symbol  
VCBO  
VCEO  
ICBO  
ICEO  
IEBO  
hFE  
Conditions  
Min  
Typ  
Max  
Unit  
V
IC = 10 µA, IE = 0  
50  
50  
IC = 2 mA, IB = 0  
V
VCB = 50 V, IE = 0  
0.1  
0.5  
0.1  
µA  
VCE = 50 V, IB = 0  
Emitter cutoff current  
DC current gain  
VEB = 6 V, IC = 0  
mA  
VCE = 10 V, IC = 5 mA  
IC = 10 mA, IB = 0.3 mA  
VCC = 5 V, VB = 0.5 V, RL = 1 kΩ  
VCC = 5 V, VB = 3.5 V, RL = 1 kΩ  
80  
Collector to emitter saturation voltage  
High-level output voltage  
Low-level output voltage  
Input resistance  
VCE(sat)  
VOH  
VOL  
0.25  
V
V
4.9  
0.2  
+30%  
1.2  
V
R1  
30%  
47  
1.0  
150  
kΩ  
Resistance ratio  
R1/R2  
fT  
0.8  
Gain bandwidth product  
VCB = 10 V, IE = −2 mA, f = 200MHz  
MHz  
Note) The part number in the parenthesis shows conventional part number.  
Publication date: May 2002  
SJJ00236AED  
1

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