Datasheet > XP02501|XP2501

XP02501|XP2501

更新时间： 2024-09-18 23:33:47

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
3页	84K
描述
Composite Device - Composite Transistors

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中文翻译

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XP02501|XP2501 数据手册

Composite Transistors

XP02501 (XP2501)

Silicon NPN epitaxial planar type

Unit: mm

+0.05

–0.02

0.12

For general amplification

0.20 0.05

■ Features

• Two elements incorporated into one package

(Base-coupled transistors)

• Reduction of the mounting area and assembly cost by one half

(0.65) (0.65)

1.3 0.1

2.0 0.1

■ Basic Part Number

• 2SD0601A (2SD601A) × 2

10˚

■ Absolute Maximum Ratings T_a= 25°C

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open) V_CBO

Collector-emitter voltage (Base open) V_CEO

Emitter-base voltage (Collector open) V_EBO

1: Emitter (Tr1)

2: Base

4: Collector (Tr2)

5: Collector (Tr1)

3: Emitter (Tr2)

EIAJ: SC-88A

SMini5-G1 Package

Collector current

I_C

I_CP

P_T

100

200

°C

Marking Symbol: 5W

Peak collector current

Total power dissipation

Junction temperature

Storage temperature

150

Internal Connection

T_j

150

T_stg

−55 to +150

°C

Tr1

Tr2

■ Electrical Characteristics T_a= 25°C 3°C

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_CBO

Conditions

Min

Typ

Max

Unit

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Emitter-base voltage (Collector open)

Collector-base cutoff current (Emitter open)

Collector-emitter cutoff current (Base open)

Forward current transfer ratio

h_FEratio ^*

I_C= 10 µA, I_E= 0

I_C= 2 mA, I_B= 0

I_E= 10 µA, I_C= 0

V_CB= 20 V, I_E= 0

V_CE= 10 V, I_B= 0

V_CE= 10 V, I_C= 2 mA

0.1

100

460

µA



I_CEO

h_FE

160

h_FE(Small/V_CE= 10 V, I_C= 2 mA

Large)

0.50

0.99

Collector-emitter saturation voltage

Transition frequency

V_CE(sat)I_C= 100 mA, I_B= 10 mA

0.1

150

3.5

0.3

MHz

f_T

V_CB= 10 V, I_E= −2 mA, f = 200 MHz

V_CB= 10 V, I_E= 0, f = 1 MHz

Collector output capacitance

C_ob

(Common base, input open circuited)

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. : Ratio between 2 elements

Note) The part number in the parenthesis shows conventional part number.

Publication date: August 2003

SJJ00156BED

12 3

中文翻译

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