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XP03311

更新时间: 2024-11-07 22:11:19
品牌 Logo 应用领域
松下 - PANASONIC 晶体晶体管
页数 文件大小 规格书
4页 54K
描述
Silicon NPN(PNP) epitaxial planer transistor

XP03311 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:SC-88A
包装说明:SMALL OUTLINE, R-PDSO-G5针数:5
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.82
其他特性:BUILT IN BIAS RESISTOR RATIO IS 1最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:CASCADED, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):35JESD-30 代码:R-PDSO-G5
JESD-609代码:e6湿度敏感等级:1
元件数量:2端子数量:5
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN AND PNP最大功率耗散 (Abs):0.15 W
认证状态:Not Qualified子类别:BIP General Purpose Small Signal
表面贴装:YES端子面层:Tin/Bismuth (Sn/Bi)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):150 MHz
Base Number Matches:1

XP03311 数据手册

 浏览型号XP03311的Datasheet PDF文件第2页浏览型号XP03311的Datasheet PDF文件第3页浏览型号XP03311的Datasheet PDF文件第4页 
Composite Transistors  
XP03311  
Silicon NPN epitaxial planer transistor (Tr1)  
Silicon PNP epitaxial planer transistor (Tr2)  
Unit: mm  
For switching/digital circuits  
2.1±0.1  
1.25±0.1  
0.425  
0.425  
5
Features  
1
Two elements incorporated into one package.  
(Transistors with built-in resistor, Tr1 collecter is connected to  
Tr2 base.)  
2
3
4
Reduction of the mounting area and assembly cost by one half.  
Basic Part Number of Element  
UN1211+UN1111  
0.2±0.1  
1 : Emitter(Tr1)  
2 : Base(Tr1)  
3 : Emitter(Tr2)  
4 : Collector(Tr2)  
5 : Collector(Tr1)  
Base(Tr2)  
Absolute Maximum Ratings (Ta=25˚C)  
EIAJ : SC–88A  
S–Mini Type Package (5–pin)  
Parameter  
Symbol  
VCBO  
VCEO  
IC  
Ratings  
50  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Collector current  
Collector to base voltage  
Collector to emitter voltage  
Collector current  
Total power dissipation  
Junction temperature  
Storage temperature  
Marking Symbol: DU  
Internal Connection  
Tr1  
50  
V
100  
mA  
V
VCBO  
VCEO  
IC  
–50  
Tr1  
1
5
4
Tr2  
–50  
V
–100  
150  
mA  
mW  
˚C  
2
PT  
3
Overall  
Tj  
150  
Tr2  
Tstg  
–55 to +150  
˚C  
1

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