Datasheet > XP02211|XP2211

XP02211|XP2211

更新时间： 2024-11-07 23:33:47

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
3页	82K
描述
Composite Device - Composite Transistors

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中文翻译

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XP02211|XP2211 数据手册

Composite Transistors

XP02211 (XP2211)

Silicon NPN epitaxial planar type

Unit: mm

+0.05

–0.02

0.12

For switching/digital circuits

0.20 0.05

■ Features

• Two elements incorporated into one package

(Base-coupled transistors with built-in resistor)

• Reduction of the mounting area and assembly cost by one half

(0.65) (0.65)

1.3 0.1

2.0 0.1

■ Basic Part Number

• UNR2211 (UN2211) × 2

10˚

■ Absolute Maximum Ratings T_a= 25°C

Parameter

Symbol

Rating

Unit

1: Emitter (Tr1)

2: Base

3: Emitter (Tr2)

EIAJ: SC-88A

4: Collector (Tr2)

5: Collector (Tr1)

Collector-base voltage (Emitter open) V_CBO

Collector-emitter voltage (Base open) V_CEO

SMini5-G1 Package

Collector current

I_C

P_T

T_j

100

°C

Marking Symbol: 9O

Total power dissipation

Junction temperature

Storage temperature

150

Internal Connection

T_stg

−55 to +150

°C

Tr1

Tr2

■ Electrical Characteristics T_a= 25°C 3°C

Parameter

Symbol

V_CBO

V_CEO

I_CBO

Conditions

Min

Typ

Max

Unit

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Collector-base cutoff current (Emitter open)

Collector-emitter cutoff current (Base open)

Emitter-base cutoff current (Collector open)

Forward current transfer ratio

h_FERatio ^*

I_C= 10 µA, I_E= 0

I_C= 2 mA, I_B= 0

V_CB= 50 V, I_E= 0

V_CE= 50 V, I_B= 0

V_EB= 6 V, I_C= 0

V_CE= 10 V, I_C= 5 mA

0.1

0.5

µA



I_CEO

I_EBO

h_FE

h_FE(SmallV_CE= 10 V, I_C= 5 mA

/Large)

0.50

0.99



Collector-emitter saturation voltage

Output voltage high-level

Output voltage low-level

Input resistance

V_CE(sat)I_C= 10 mA, I_B= 0.3 mA

0.25

V_OH

V_OL

R₁

V_CC= 5 V, V_B= 0.5 V, R_L= 1 kΩ

4.9

V_CC= 5 V, V_B= 2.5 V, R_L= 1 kΩ

0.2

+30%

1.2

−30%

1.0

150

kΩ



Resistance ratio

R₁/ R₂

f_T

0.8

Transition frequency

V_CB= 10 V, I_E= −2 mA, f = 200 MHz

MHz

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. : Ratio between 2 elements

Note) The part number in the parenthesis shows conventional part number.

Publication date: June 2003

SJJ00153BED

12 3

中文翻译

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