Datasheet > XP01601

XP01601

更新时间： 2024-09-18 23:33:47

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其他 - ETC		/
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描述
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数据手册

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XP01601 数据手册

Composite Transistors

XP01601 (XP1601)

Silicon PNP epitaxial planer transistor (Tr1)

Silicon NPN epitaxial planer transistor (Tr2)

Unit: mm

For general amplification

2.1 0.1

1.25 0.1

0.425

Features

Two elements incorporated into one package.

(Emitter-coupled transistors)

Reduction of the mounting area and assembly cost by one half.

Basic Part Number of Element

2SB0709A(2SB709A) + 2SD0601A(2SD601A)

0.2 0.1

Absolute Maximum Ratings (Ta=25˚C)

1 : Base (Tr1)

2 : Emitter

3 : Base (Tr2)

4 : Collector (Tr2)

5 : Collector (Tr1)

EIAJ : SC–88A

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_C

Ratings

–60

Unit

S–Mini Type Package (5–pin)

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Peak collector current

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Peak collector current

Total power dissipation

Junction temperature

Storage temperature

–50

Marking Symbol: 7S

Internal Connection

Tr1

–7

–100

–200

I_CP

Tr1

V_CBO

V_CEO

V_EBO

I_C

Tr2

100

˚C

Tr2

I_CP

200

P_T

150

T_j

150

Overall

T_stg

–55 to +150

˚C

Note.) The Part number in the Parenthesis shows conventional part number.

12 3 4 5 6

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与XP01601相关器件

型号	品牌	获取价格	描述	数据表
XP01601(XP1601)	ETC	获取价格	XP01601 (XP1601) - Composite Transistors
XP01601\|XP1601	ETC	获取价格	Composite Device - Composite Transistors
XP01878	ETC	获取价格	複合デバイス－複合トランジスタ
XP02210	ETC	获取价格	TRANSISTOR \| 50V V(BR)CEO \| 100MA I(C) \| SOT-353
XP02210(XP2210)	ETC	获取价格	複合デバイス－複合トランジスタ
XP02210\|XP2210	ETC	获取价格	Composite Device - Composite Transistors
XP02211	ETC	获取价格	TRANSISTOR \| 50V V(BR)CEO \| 100MA I(C) \| SOT-353
XP02211(XP2211)	ETC	获取价格	Composite Device - Composite Transistors
XP02211\|XP2211	ETC	获取价格	Composite Device - Composite Transistors
XP02215	ETC	获取价格	TRANSISTOR \| 50V V(BR)CEO \| 100MA I(C) \| SOT-353