Datasheet > XP01554|XP1554

XP01554|XP1554

更新时间： 2024-11-07 23:33:47

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
3页	91K
描述
Composite Device - Composite Transistors

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

XP01554|XP1554 数据手册

Composite Transistors

XP01554 (XP1554)

Silicon NPN epitaxial planar type

Unit: mm

+0.05

–0.02

0.12

0.20 0.05

For high-speed switching

■ Features

• Two elements incorporated into one package

(Emitter-coupled transistors)

(0.65) (0.65)

1.3 0.1

2.0 0.1

• Reduction of the mounting area and assembly cost by one half

• Low collector-emitter saturation voltage V_CE(sat)

10˚

■ Basic Part Number

• 2SC3757 × 2

■ Absolute Maximum Ratings T_a= 25°C

1: Base (Tr1)

2: Emitter

3: Base (Tr2)

EIAJ: SC-88A

4: Collector (Tr2)

5: Collector (Tr1)

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open) V_CBO

SMini5-G1 Package

Collector-emitter voltage (E-B short)

V_CEO

V_CBO

I_C

Marking Symbol: EU

(Collector open)

Emitter-base voltage

Internal Connection

Collector current

100

°C

Peak collector current

Total power dissipation

Junction temperature

Storage temperature

I_CP

300

P_T

150

T_j

150

Tr1

Tr2

T_stg

−55 to +150

°C

■ Electrical Characteristics T_a= 25°C 3°C

Parameter

Symbol

I_CBO

Conditions

Min

Typ

Max

0.1

Unit

µA



Collector-base cutoff current (Emitter open)

Emitter-base cutoff current (Collector open)

Forward current transfer ratio

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

V_CB= 15 V, I_E= 0

I_EBO

V_EB= 4 V, I_C= 0

0.1

h_FE

V_CE= 1 V, I_C= 10 mA

200

0.25

1.0

V_CE(sat)I_C= 10 mA, I_B= 1 mA

V_BE(sat)I_C= 10 mA, I_B= 1 mA

0.17

f_T

V_CB= 10 V, I_E= −10 mA, f = 200 MHz

450

MHz

Collector output capacitance

C_ob

V_CB= 10 V, I_E= 0, f = 1 MHz

(Common base, input open circuited)

Turn-on time

Turn-off time

Storage time

t_on

t_off

t_stg

Refer to the switching time measurement

circuit

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

Note) The part number in the parenthesis shows conventional part number.

Publication date: February 2004

SJJ00150BED

12 3

中文翻译

下载PDF

与XP01554|XP1554相关器件

型号	品牌	获取价格	描述	数据表
XP01601	ETC	获取价格	BJT
XP01601(XP1601)	ETC	获取价格	XP01601 (XP1601) - Composite Transistors
XP01601\|XP1601	ETC	获取价格	Composite Device - Composite Transistors
XP01878	ETC	获取价格	複合デバイス－複合トランジスタ
XP02210	ETC	获取价格	TRANSISTOR \| 50V V(BR)CEO \| 100MA I(C) \| SOT-353
XP02210(XP2210)	ETC	获取价格	複合デバイス－複合トランジスタ
XP02210\|XP2210	ETC	获取价格	Composite Device - Composite Transistors
XP02211	ETC	获取价格	TRANSISTOR \| 50V V(BR)CEO \| 100MA I(C) \| SOT-353
XP02211(XP2211)	ETC	获取价格	Composite Device - Composite Transistors
XP02211\|XP2211	ETC	获取价格	Composite Device - Composite Transistors