Composite Transistors
XP01507 (XP1507)
Silicon NPN epitaxial planer transistor
Unit: mm
High breakdown voltage and for low noise amplification
2.1 0.1
1.25 0.1
0.425
0.425
Features
I
5
1
G
Two elements incorporated into one package.
(Emitter-coupled transistors)
Reduction of the mounting area and assembly cost by one half.
2
3
4
G
Basic Part Number of Element
2SD0814(2SD814) × 2 elements
I
G
0.2 0.1
Absolute Maximum Ratings (Ta=25˚C)
1 : Base (Tr1)
2 : Emitter
3 : Base (Tr2)
4 : Collector (Tr2)
5 : Collector (Tr1)
EIAJ : SC–88A
I
Parameter
Symbol
VCBO
VCEO
VEBO
IC
Ratings
Unit
V
S–Mini Type Package (5–pin)
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Peak collector current
Total power dissipation
150
150
V
Rating
Marking Symbol: 4O
Internal Connection
of
5
50
V
element
mA
mA
mW
˚C
ICP
100
Tr1
1
5
4
PT
150
Overall Junction temperature
Storage temperature
Tj
150
2
Tstg
–55 to +150
˚C
3
Tr2
Electrical Characteristics (Ta=25˚C)
I
Parameter
Symbol
VCEO
Conditions
min
150
5
typ
max
Unit
V
Collector to emitter voltage
Emitter to base voltage
IC = 100µA, IB = 0
VEBO
ICBO
hFE
IE = 10µA, IC = 0
V
Collector cutoff current
VCB = 100V, IE = 0
VCE = 5V, IC = 10mA
1
µA
Forward current transfer ratio
Forward current transfer hFE ratio
90
450
hFE (small/large)*1 VCE = 5V, IC = 10mA
0.5
0.99
Collector to emitter saturation voltage VCE(sat)
IC = 30mA, IB = 3mA
1
V
MHz
pF
Transition frequency
fT
VCB = 10V, IE = –10mA, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz
150
2.3
Collector output capacitance
*1 Ratio between 2 elements
Cob
Note.) The Part number in the Parenthesis shows conventional part number.
1