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XP01507|XP1507 PDF预览

XP01507|XP1507

更新时间: 2024-09-18 23:33:47
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其他 - ETC 晶体晶体管
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描述
Composite Device - Composite Transistors

XP01507|XP1507 数据手册

 浏览型号XP01507|XP1507的Datasheet PDF文件第2页浏览型号XP01507|XP1507的Datasheet PDF文件第3页 
Composite Transistors  
XP01507 (XP1507)  
Silicon NPN epitaxial planar type  
Unit: mm  
+0.05  
–0.02  
0.12  
For high breakdown voltage and low-noise amplification  
0.20 0.05  
5
4
3
Features  
Two elements incorporated into one package  
(Emitter-coupled transistors)  
1
2
Reduction of the mounting area and assembly cost by one half  
(0.65) (0.65)  
1.3 0.1  
2.0 0.1  
Basic Part Number  
2SC2631 × 2  
10˚  
Absolute Maximum Ratings Ta = 25°C  
Parameter  
Symbol  
Rating  
150  
Unit  
V
1: Base (Tr1)  
2: Emitter  
4: Collector (Tr2)  
5: Collector (Tr1)  
Collector-base voltage (Emitter open) VCBO  
Collector-emitter voltage (Base open) VCEO  
150  
V
3: Base (Tr2)  
EIAJ: SC-88A  
SMini5-G1 Package  
(Collector open)  
VCBO  
IC  
5
V
Emitter-base voltage  
Collector current  
50  
mA  
mA  
mW  
°C  
Marking Symbol: 4O  
Peak collector current  
ICP  
PT  
100  
Internal Connection  
Total power dissipation  
Junction temperature  
Storage temperature  
150  
5
4
Tj  
150  
Tstg  
55 to +150  
°C  
Tr1  
Tr2  
3
1
2
Electrical Characteristics Ta = 25°C 3°C  
Parameter  
Symbol  
VCEO  
VEBO  
ICBO  
Conditions  
Min  
150  
5
Typ  
Max  
Unit  
V
Collector-emitter voltage (Base open)  
Emitter-base voltage (Collector open)  
Collector-base cutoff current (Emitter open)  
Forward current transfer ratio  
hFE ratio *  
IC = 100 µA, IB = 0  
IE = 10 µA, IC = 0  
V
VCB = 100 V, IE = 0  
VCE = 5 V, IC = 10 mA  
1
µA  
hFE  
90  
450  
hFE(Small/ VCE = 5 V, IC = 10 mA  
Large)  
0.50  
0.99  
Collector-emitter saturation voltage  
Transition frequency  
VCE(sat) IC = 30 mA, IB = 3 mA  
1
V
MHz  
pF  
fT  
VCB = 10 V, IE = −10 mA, f = 200 MHz  
VCB = 10 V, IE = 0, f = 1 MHz  
150  
2.3  
Collector output capacitance  
Cob  
(Common base, input open circuited)  
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
2. : Ratio between 2 elements  
*
Note) The part number in the parenthesis shows conventional part number.  
Publication date: February 2004  
SJJ00148BED  
1

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