Datasheet > XP01507(XP1507)

XP01507(XP1507)

更新时间： 2024-09-18 23:33:47

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描述
複合デバイス－複合トランジスタ

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中文翻译

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数据手册

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XP01507(XP1507) 数据手册

Composite Transistors

XP01507 (XP1507)

Silicon NPN epitaxial planer transistor

Unit: mm

High breakdown voltage and for low noise amplification

2.1 0.1

1.25 0.1

0.425

Features

Two elements incorporated into one package.

(Emitter-coupled transistors)

Reduction of the mounting area and assembly cost by one half.

Basic Part Number of Element

2SD0814(2SD814) × 2 elements

0.2 0.1

Absolute Maximum Ratings (Ta=25˚C)

1 : Base (Tr1)

2 : Emitter

3 : Base (Tr2)

4 : Collector (Tr2)

5 : Collector (Tr1)

EIAJ : SC–88A

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_C

Ratings

Unit

S–Mini Type Package (5–pin)

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Peak collector current

Total power dissipation

150

Rating

Marking Symbol: 4O

Internal Connection

element

˚C

I_CP

100

Tr1

P_T

150

Overall Junction temperature

Storage temperature

T_j

150

T_stg

–55 to +150

˚C

Tr2

Electrical Characteristics (Ta=25˚C)

Parameter

Symbol

V_CEO

Conditions

min

150

typ

max

Unit

Collector to emitter voltage

Emitter to base voltage

I_C= 100µA, I_B= 0

V_EBO

I_CBO

h_FE

I_E= 10µA, I_C= 0

Collector cutoff current

V_CB= 100V, I_E= 0

V_CE= 5V, I_C= 10mA

µA

Forward current transfer ratio

Forward current transfer h_FEratio

450

h_FE(small/large)^*1V_CE= 5V, I_C= 10mA

0.5

0.99

Collector to emitter saturation voltage V_CE(sat)

I_C= 30mA, I_B= 3mA

MHz

Transition frequency

f_T

V_CB= 10V, I_E= –10mA, f = 200MHz

V_CB= 10V, I_E= 0, f = 1MHz

150

2.3

Collector output capacitance

^*1Ratio between 2 elements

C_ob

Note.) The Part number in the Parenthesis shows conventional part number.

12 3

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