是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | TO-247 | 包装说明: | TO-247, 3 PIN |
针数: | 3 | Reach Compliance Code: | not_compliant |
风险等级: | 5.28 | 雪崩能效等级(Eas): | 160 mJ |
外壳连接: | ISOLATED | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 1000 V | 最大漏极电流 (Abs) (ID): | 4.6 A |
最大漏极电流 (ID): | 4.6 A | 最大漏源导通电阻: | 3.5 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-247 |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 150 W |
最大脉冲漏极电流 (IDM): | 18.4 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
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2SK1359 | TOSHIBA |
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4.3A, 1000V, 3.500 Ohm, N-Channel Power MOSFET |
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