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STW5NA100 PDF预览

STW5NA100

更新时间: 2024-11-27 22:14:43
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管
页数 文件大小 规格书
6页 101K
描述
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

STW5NA100 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-247包装说明:TO-247, 3 PIN
针数:3Reach Compliance Code:not_compliant
风险等级:5.28雪崩能效等级(Eas):160 mJ
外壳连接:ISOLATED配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:1000 V最大漏极电流 (Abs) (ID):4.6 A
最大漏极电流 (ID):4.6 A最大漏源导通电阻:3.5 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-247
JESD-30 代码:R-PSFM-T3JESD-609代码:e0
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):150 W
最大脉冲漏极电流 (IDM):18.4 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

STW5NA100 数据手册

 浏览型号STW5NA100的Datasheet PDF文件第2页浏览型号STW5NA100的Datasheet PDF文件第3页浏览型号STW5NA100的Datasheet PDF文件第4页浏览型号STW5NA100的Datasheet PDF文件第5页浏览型号STW5NA100的Datasheet PDF文件第6页 
STW5NA100  
STH5NA100FI  
N - CHANNEL ENHANCEMENT MODE  
POWER MOS TRANSISTORS  
PRELIMINARY DATA  
TYPE  
VDSS  
RDS(on)  
ID  
STW5NA100  
STH5NA100FI  
1000 V  
1000 V  
< 3.5 Ω  
< 3.5 Ω  
4.6 A  
2.9 A  
TYPICAL RDS(on) = 2.9 Ω  
± 30V GATE TO SOURCE VOLTAGE RATING  
100% AVALANCHE TESTED  
REPETITIVE AVALANCHE DATA AT 100oC  
GATE CHARGE MINIMISED  
3
3
2
2
1
REDUCED THRESHOLD VOLTAGE SPREAD  
1
APPLICATIONS  
TO-247  
ISOWATT218  
HIGH CURRENT, HIGH SPEED SWITCHING  
SWITCH MODE POWER SUPPLY (SMPS)  
DC-AC CONVERTERS FOR WELDING  
EQUIPMENT AND UNINTERRUPTIBLE  
POWER SUPPLIES AND MOTOR DRIVE  
INTERNAL SCHEMATIC DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
STW5NA100 STH5NA100FI  
VDS  
VDGR  
VGS  
ID  
Drain-source Voltage (VGS = 0)  
Drain- gate Voltage (RGS = 20 k)  
Gate-source Voltage  
1000  
1000  
± 30  
V
V
V
o
Drain Current (continuous) at Tc = 25 C  
4.6  
2.9  
2.9  
1.8  
A
o
ID  
Drain Current (continuous) at Tc = 100 C  
A
IDM()  
Ptot  
Drain Current (pulsed)  
18.4  
150  
1.2  
18.4  
60  
A
o
Total Dissipation at Tc = 25 C  
W
W/oC  
V
oC  
oC  
Derating Factor  
0.48  
4000  
VISO  
Tstg  
Tj  
Insulation Withstand Voltage (DC)  
Storage Temperature  
-65 to 150  
150  
Max. Operating Junction Temperature  
() Pulse width limited by safe operating area  
1/6  
October 1997  

STW5NA100 替代型号

型号 品牌 替代类型 描述 数据表
2SK1359 TOSHIBA

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