Datasheet > IRFPG40

IRFPG40

更新时间： 2024-11-27 22:32:03

品牌	Logo	应用领域
英特矽尔 - INTERSIL		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
6页	50K
描述
4.3A, 1000V, 3.500 Ohm, N-Channel Power MOSFET

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IRFPG40 数据手册

IRFPG40

Data Sheet

July 1999

File Number 2879.2

4.3A, 1000V, 3.500 Ohm, N-Channel

Power MOSFET

Features

• 4.3A, 1000V

This N-Channel enhancement mode silicon gate power ﬁeld

effect transistor is an advanced power MOSFET designed,

tested, and guaranteed to withstand a speciﬁed level of

energy in the breakdown avalanche mode of operation. All of

these power MOSFETs are designed for applications such

as switching regulators, switching convertors, motor drivers,

relay drivers, and drivers for high power bipolar switching

transistors requiring high speed and low gate drive power.

These types can be operated directly from integrated

circuits.

• r

= 3.500Ω

DS(ON)

• UIS SOA Rating Curve (Single Pulse)

• -55 C to 150 C Operating and Storage Temperature

Symbol

Formerly developmental type TA09850.

Ordering Information

PART NUMBER

PACKAGE

BRAND

IRFPG40

TO-247

NOTE: When ordering, include the entire part number.

Packaging

JEDEC STYLE TO-247

SOURCE

DRAIN

GATE

DRAIN

(TAB)

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

4-365

12 3 4 5 6

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IRFPG40 替代型号

型号	品牌	替代类型	描述	数据表
IRFPG40PBF	VISHAY	功能相似	Power MOSFET
2SK1359	TOSHIBA	功能相似	N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, DC-DC CONVERTER AND MOTOR DRIVE AP
STW5NA100	STMICROELECTRONICS	功能相似	N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

与IRFPG40相关器件

型号	品牌	获取价格	描述	数据表
IRFPG40PBF	INFINEON	获取价格	HEXFET POWER MOSFET ( VDSS = 1000V , RDS(on)
IRFPG40PBF	VISHAY	获取价格	Power MOSFET
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IRFPG50	INFINEON	获取价格	Power MOSFET(Vdss=1000V, Rds(on)=2.0ohm, Id=6.1A)
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IRFPG50-205PBF	VISHAY	获取价格	Power Field-Effect Transistor, 6.1A I(D), 1000V, 2ohm, 1-Element, N-Channel, Silicon, Meta
IRFPG50PBF	VISHAY	获取价格	Power MOSFET
IRFPG50PBF	INFINEON	获取价格	HEXFET Power MOSFET
IRFPG52	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 1KV V(BR)DSS \| 5.5A I(D) \| TO-247AC
IRFPG60	INFINEON	获取价格	Power Field-Effect Transistor, 16A I(D), 600V, 0.4ohm, 1-Element, N-Channel, Silicon, Meta