Datasheet > IRFPS35N50LPBF

IRFPS35N50LPBF

更新时间： 2024-11-28 05:39:31

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	152K
描述
IRFPS35N50L

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRFPS35N50LPBF 数据手册

IRFPS35N50L, SiHFPS35N50L

Vishay Siliconix

Power MOSFET

FEATURES

• Super Fast Body Diode Eliminates the Need for

External Diodes in ZVS Applications

PRODUCT SUMMARY

V_DS(V)

500

Available

_DS(on)(Ω)

V_GS= 10 V

0.125

RoHS*

• Lower Gate Charge Results in Simpler Drive

Requirements

Q_g(Max.) (nC)

230

COMPLIANT

_gs(nC)

_gd(nC)

• Enhanced dV/dt Capabilities Offer Improved Ruggedness

110

• Higher Gate Voltage Threshold Offers Improved Noise

Immunity

Configuration

Single

• Lead (Pb)-free Available

SUPER-247^TM

APPLICATIONS

• Zero Voltage Switching SMPS

• Telecom and Server Power Supplies

• Uninterruptible Power Supplies

• Motor Control Applications

N-Channel MOSFET

ORDERING INFORMATION

Package

SUPER-247^TM

IRFPS35N50LPbF

SiHFPS35N50L-E3

IRFPS35N50L

Lead (Pb)-free

SnPb

SiHFPS35N50L

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

500

V_GS

T_C= 25 °C

T_C=100°C

Continuous Drain Current

_GSat 10 V

I_D

Pulsed Drain Current^a

I_DM

140

Linear Derating Factor

3.6

W/°C

Single Pulse Avalanche Energy^b

Repetitive Avalanche Current^a

Repetitive Avalanche Energy^a

E_AS

I_AR

560

E_AR

Maximum Power Dissipation

_C= 25 °C

P_D

450

Peak Diode Recovery dV/dt^c

dV/dt

T_J, T_stg

- 55 to + 150

300^d

V/ns

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

°C

for 10 s

6-32 or M3 screw

lbf · in

N · m

Mounting Torque

1.1

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Starting T_J= 25 °C, L = 0.97 mH, R_G= 25 Ω, I_AS= 34 A (see fig. 12).

c. I_SD≤ 34 A, dI/dt ≤ 765 A/µs, V_DD≤ V_DS, T_J≤ 150 °C.

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91257

S-81368-Rev. A, 21-Jul-08

www.vishay.com

12 3 4 5 6 7 8

中文翻译

下载PDF

与IRFPS35N50LPBF相关器件

型号	品牌	获取价格	描述	数据表
IRFPS37N50	INFINEON	获取价格	Power MOSFET(Vdss=500V, Rds(on)max=0.13ohm, Id=36A)
IRFPS37N50A	INFINEON	获取价格	Power MOSFET(Vdss=500V, Rds(on)max=0.13ohm, Id=36A)
IRFPS37N50A	VISHAY	获取价格	Power MOSFET
IRFPS37N50APBF	INFINEON	获取价格	HEXFET Power MOSFET ( VDSS = 500V , RDS(on)ma
IRFPS37N50APBF	VISHAY	获取价格	Power MOSFET
IRFPS3810	INFINEON	获取价格	Power MOSFET(Vdss=100V, Rds(on)=0.009ohm, Id=
IRFPS3810PBF	INFINEON	获取价格	HEXFET㈢ Power MOSFET
IRFPS3815	INFINEON	获取价格	Power MOSFET(Vdss=150V, Rds(on)=0.015ohm, Id=105A)
IRFPS3815PBF	INFINEON	获取价格	HEXFET Power MOSFET
IRFPS38N60L	INFINEON	获取价格	SMPS MOSFET