IRFPS43N50K

更新时间： 2024-11-28 05:39:31

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	148K
描述
RFPS43N50K

阅读下载

中文翻译

获取价格

数据手册
替代型号

如果您发现信息不准确，欢迎纠错

IRFPS43N50K 数据手册

IRFPS43N50K, SiHFPS43N50K

Vishay Siliconix

Power MOSFET

FEATURES

• Low Gate Charge Q_gResults in Simple Drive

Requirement

PRODUCT SUMMARY

V_DS(V)

500

Available

_DS(on)(Ω)

V_GS= 10 V

0.078

RoHS*

• Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

Q_g(Max.) (nC)

350

COMPLIANT

_gs(nC)

_gd(nC)

180

• Fully Characterized Capacitance and Avalanche Voltage

and Current

Configuration

Single

• Low R_DS(on)

• Lead (Pb)-free Available

SUPER-247^TM

APPLICATIONS

• Switch Mode Power Supply (SMPS)

• Uninterruptible Power Supply

• High Speed Power Switching

• Hard Switched and High Frequency Circuits

N-Channel MOSFET

ORDERING INFORMATION

Package

SUPER-247^TM

IRFPS43N50KPbF

SiHFPS43N50K-E3

IRFPS43N50K

Lead (Pb)-free

SnPb

SiHFPS43N50K

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

500

V_GS

T_C= 25 °C

T_C=100°C

Continuous Drain Current

_GSat 10 V

I_D

Pulsed Drain Current^a

I_DM

190

Linear Derating Factor

4.3

W/°C

Single Pulse Avalanche Energy^b

Repetitive Avalanche Current^a

Repetitive Avalanche Energy^a

E_AS

I_AR

910

E_AR

Maximum Power Dissipation

T_C= 25 °C

P_D

540

Peak Diode Recovery dV/dt^c

dV/dt

T_J, T_stg

9.0

V/ns

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

- 55 to + 150

300^d

°C

for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Starting T_J= 25 °C, L = 0.82 mH, R_G= 25 Ω, I_AS= 47 A (see fig. 12c).

c. I_SD≤ 47 A, dI/dt ≤ 230 A/µs, V_DD≤ V_DS, T_J≤ 150 °C.

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91262

S-81367-Rev. B, 21-Jul-08

www.vishay.com

12 3 4 5 6 7 8

中文翻译

下载PDF

IRFPS43N50K 替代型号

型号	品牌	替代类型	描述	数据表
IXFR55N50	IXYS	功能相似	HiPerFET-TM Power MOSFETs ISOPLUS247-TM

与IRFPS43N50K相关器件

型号	品牌	获取价格	描述	数据表
IRFPS43N50KPBF	VISHAY	获取价格	RFPS43N50K
IRFPS43N50KPBF	INFINEON	获取价格	HEXFET㈢ Power MOSFET ( VDSS = 500V , RDS(on)t
IRFPS59N60C	INFINEON	获取价格	SMPS MOSFET
IRFPS59N60CPBF	INFINEON	获取价格	Power Field-Effect Transistor, 59A I(D), 600V, 0.045ohm, 1-Element, N-Channel, Silicon, Me
IRFPS60N50C	INFINEON	获取价格	HEXFET Power MOSFET
IRFPS60N50CPBF	INFINEON	获取价格	Power Field-Effect Transistor, 60A I(D), 500V, 0.043ohm, 1-Element, N-Channel, Silicon, Me
IRFQ110	SEME-LAB	获取价格	QUAD N-CHANNEL ENHANCEMENT MOSFETS
IRFQ110		获取价格	Quad MOSFET
IRFR	INFINEON	获取价格	Power MOSFET(Vdss=100V, Rds(on)=0.21ohm, Id=9.4A)
IRFR	KERSEMI	获取价格	Ultra Low On-Resistance