Datasheet > IRFR/U2307ZPBF

IRFR/U2307ZPBF

更新时间： 2024-11-07 12:46:27

品牌	Logo	应用领域
科盛美 - KERSEMI		/
页数	文件大小	规格书
11页	4171K
描述
Advanced Process Technology

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中文翻译

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数据手册

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IRFR/U2307ZPBF 数据手册

IRFR2307ZPbF

IRFU2307ZPbF

Features

Advanced Process Technology

UltraLowOn-Resistance

175°COperatingTemperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead-Free

V_DSS= 75V

R_DS(on)= 16mΩ

Description

I_D= 42A

Specifically designed for Automotive applications,

this HEXFET^®Power MOSFET utilizes the latest

processing techniques to achieve extremely low

on-resistance per silicon area. Additional features

of this design are a 175°C junction operating

temperature, fast switching speed and improved

repetitive avalanche rating . These features com-

bine to make this design an extremely efficient and

reliable device for use in Automotive applications

and a wide variety of other applications.

D-Pak

I-Pak

IRFU2307Z

IRFR2307Z

Absolute Maximum Ratings

Parameter

Max.

Units

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

Continuous Drain Current, V_GS@ 10V

Continuous Drain Current, V_GS@ 10V (Package Limited)

Pulsed Drain Current

@ T = 25°C

@ T = 100°C

@ T = 25°C

210

110

@T = 25°C Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy

0.70

± 20

W/°C

E_{AS (Thermally limited)}

100

140

Single Pulse Avalanche Energy Tested Value

Avalanche Current

E_AS(Tested )

I_AR

See Fig.12a, 12b, 15, 16

Repetitive Avalanche Energy

Operating Junction and

E_AR

-55 to + 175

Storage Temperature Range

°C

STG

Soldering Temperature, for 10 seconds

Mounting Torque, 6-32 or M3 screw

300 (1.6mm from case )

10 lbf in (1.1N m)

Thermal Resistance

Parameter

Typ.

–––

Max.

1.42

Units

Junction-to-Case

R_θJC

R_θJA

Junction-to-Ambient (PCB mount)

Junction-to-Ambient

–––

°C/W

–––

110

www.kersemi.com

12/20/04

12 3 4 5 6 7...11

中文翻译

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