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IRFR010TRLPBF PDF预览

IRFR010TRLPBF

更新时间： 2024-11-28 13:08:47
品牌 Logo 应用领域
威世 - VISHAY 晶体晶体管脉冲
页数 文件大小 规格书
9页 1677K
描述
TRANSISTOR 8.2 A, 50 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, FET General Purpose Power

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IRFR010TRLPBF 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：SMALL OUTLINE, R-PSSO-G2Reach Compliance Code：unknown
ECCN代码：EAR99风险等级：5.65
配置：SINGLE最小漏源击穿电压：50 V
最大漏极电流 (ID)：8.2 A最大漏源导通电阻：0.2 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-252AA
JESD-30 代码：R-PSSO-G2元件数量：1
端子数量：2工作模式：ENHANCEMENT MODE
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大脉冲漏极电流 (IDM)：33 A
认证状态：Not Qualified表面贴装：YES
端子形式：GULL WING端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管元件材料：SILICON
Base Number Matches：1

IRFR010TRLPBF 数据手册

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IRFR010, SiHFR010  
Vishay Siliconix  
Power MOSFET  
FEATURES  
• Low Drive Current  
• Surface Mount  
• Fast Switching  
• Ease of Paralleling  
PRODUCT SUMMARY  
VDS (V)  
50  
R
DS(on) ()  
VGS = 10 V  
0.20  
Qg (Max.) (nC)  
10  
2.6  
• Excellent Temperature Stability  
• Compliant to RoHS Directive 2002/95/EC  
Q
Q
gs (nC)  
gd (nC)  
4.8  
DESCRIPTION  
Configuration  
Single  
The Power MOSFET technology is the key to Vishay’s  
advanced line of Power MOSFET transistors. The efficient  
geometry and unique processing of this latest “State of the  
Art” design achieves: very low on-state resistance  
combined with high transconductance; superior reverse  
energy and diode recovery dV/dt capability.  
D
DPAK  
(TO-252)  
The Power MOSFET transistors also feature all of the well  
established advantages of MOSFET’S such as voltage  
control, very fast switching, ease of paralleling and  
temperature stability of the electrical parameters.  
Surface mount packages enhance circuit performance by  
reducing stray inductances and capacitance. The DPAK  
(TO-252) surface mount package brings the advantages of  
Power MOSFET’s to high volume applications where PC  
Board surface mounting is desirable. The surface mount  
option IRFR9012, SiHFR9012 is provided on 16 mm tape.  
The straight lead option IRFU9012, SiHFU9012 of the device  
is called the IPAK (TO-251).  
G
D
S
G
S
N-Channel MOSFET  
They are well suited for applications where limited heat  
dissipation is required such as, computers and peripherals,  
telecommunication equipment, dc-to-dc converters, and a  
wide range of consumer products.  
ORDERING INFORMATION  
Package  
DPAK (TO-252)  
IRFR010PbF  
SiHFR010-E3  
IRFR010  
Lead (Pb)-free  
SnPb  
SiHFR010  
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
LIMIT  
UNIT  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
50  
V
VGS  
20  
T
C = 25 °C  
8.2  
Continuous Drain Current  
VGS at 10 V  
ID  
TC = 100 °C  
5.2  
A
Pulsed Drain Currenta  
Avalanche Currentb  
IDM  
IAS  
33  
1.5  
Linear Derating Factor  
0.20  
W/°C  
W
Maximum Power Dissipation  
TC = 25 °C  
PD  
25  
Peak Diode Recovery dV/dtc  
dV/dt  
TJ, Tstg  
2.0  
V/ns  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)  
- 55 to + 150  
300d  
°C  
for 10 s  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).  
b. VDD = 25 V, starting TJ = 25 °C, L = 100 μH, Rg = 25 .  
c. ISD 8.2 A, dI/dt 130 A/μs, VDD 40 V, TJ 150 °C.  
d. 1.6 mm from case.  
e. When mounted on 1" square PCB (FR-4 or G-10 material).  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 91420  
S10-1510-Rev. A, 19-Jul-10  
www.vishay.com  
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