Datasheet > IRFR020, IRFU020, SiHFR020, SiHFU020

IRFR020, IRFU020, SiHFR020, SiHFU020

更新时间： 2024-11-29 14:54:11

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
13页	1052K
描述
Power MOSFET

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IRFR020, IRFU020, SiHFR020, SiHFU020 数据手册

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IRFR020, IRFU020, SiHFR020, SiHFU020

www.vishay.com

Vishay Siliconix

Power MOSFET

FEATURES

• Dynamic dV/dt rating

DPAK

(TO-252)

IPAK

(TO-251)

• Surface-mount (IRFR020, SiHFR020)

• Available in tape and reel

• Fast switching

Available

• Ease of paralleling

• Simple drive requirements

• Material categorization: for definitions of compliance

N-Channel MOSFET

please see www.vishay.com/doc?99912

DESCRIPTION

PRODUCT SUMMARY

V_DS(V)

Third generation power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The DPAK is designed for surface mounting using vapor

phase, infrared, or wave soldering techniques.

R_DS(on)(Ω)

V_GS= 10 V

0.10

Q_gmax. (nC)

Q_gs(nC)

5.8

Q_gd(nC)

Configuration

Single

ORDERING INFORMATION

PACKAGE

DPAK (TO-252)

SiHFR020-GE3

IRFR020TRRPbF ^a

DPAK (TO-252)

SiHFR020TR-GE3

IRFR020TRPbF ^a

IPAK (TO-251)

SiHFU020-GE3

Lead (Pb)-free and halogen-free

Lead (Pb)-free

Note

a. See device orientation

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-source voltage

Gate-source voltage

V_DS

V_GS

T_C= 25 °C

_C= 100 °C

Continuous drain current

V_GSat 10 V

I_D

9.0

Pulsed drain current ^a

I_DM

Linear derating factor

0.33

0.020

W/°C

Linear derating factor (PCB mount) ^e

Single pulse avalanche energy ^b

Maximum power dissipation

Maximum power dissipation (PCB mount) ^e

Peak diode recovery dV/dt ^c

E_AS

P_D

_C= 25 °C

T_A= 25 °C

2.5

dV/dt

5.5

V/ns

°C

Operating junction and storage temperature range

Soldering recommendations (peak temperature) ^d

T_J, T_stg

-55 to +150

260

for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 12)

b. V_DD= 25 V, starting T_J= 25 °C, L = 541 μH, R_g= 25 Ω, I_AS= 14 A (see fig. 13)

c. I_SD≤ 17 A, dI/dt ≤ 110 A/μs, V_DD≤ V_DS, T_J≤ 150 °C

d. 1.6 mm from case

e. When mounted on 1" square PCB (FR-4 or G-10 material)

S21-0466-Rev. D, 17-May-2021

Document Number: 90335

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...13

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与IRFR020, IRFU020, SiHFR020, SiHFU020相关器件

型号	品牌	获取价格	描述	数据表
IRFR020_10	VISHAY	获取价格	Power MOSFET
IRFR020PBF	VISHAY	获取价格	Power MOSFET
IRFR020TR	KERSEMI	获取价格	Power MOSFET
IRFR020TR	VISHAY	获取价格	Power MOSFET
IRFR020TRL	INFINEON	获取价格	Power Field-Effect Transistor, 15A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal
IRFR020TRLPBF	VISHAY	获取价格	Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal
IRFR020TRPBF	VISHAY	获取价格	Power MOSFET
IRFR020TRR	VISHAY	获取价格	Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal
IRFR020TRR	INFINEON	获取价格	Power Field-Effect Transistor, 15A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal
IRFR020TRRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 15A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal

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