Datasheet > IRFR014, IRFU014, SiHFR014, SiHFU014

IRFR014, IRFU014, SiHFR014, SiHFU014

更新时间： 2023-12-06 20:08:41

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
13页	885K
描述
Power MOSFET

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IRFR014, IRFU014, SiHFR014, SiHFU014 数据手册

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IRFR014, IRFU014, SiHFR014, SiHFU014

www.vishay.com

Vishay Siliconix

Power MOSFET

FEATURES

• Dynamic dV/dt rating

• Surface-mount (IRFR014, SiHFR014)

• Straight lead (IRFU014, SiHFU014)

• Available in tape and reel

DPAK

(TO-252)

IPAK

(TO-251)

Available

• Fast switching

• Ease of paralleling

• Simple drive requirements

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

N-Channel MOSFET

DESCRIPTION

PRODUCT SUMMARY

Third generation power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The DPAK is designed for surface mounting using vapor

phase, infrared, or wave soldering techniques. The straight

lead version (IRFU, SiHFU series) is for through-hole

mounting applications. Power dissipation levels up to 1.5 W

are possible in typical surface mount applications.

V_DS(V)

R_DS(on)(Ω)

V_GS= 10 V

0.20

Q_gmax. (nC)

3.1

_gs(nC)

_gd(nC)

5.8

Configuration

Single

ORDERING INFORMATION

PACKAGE

DPAK (TO-252)

SiHFR014TRL-GE3

IRFR014TRLPbF ^a

DPAK (TO-252)

SiHFR014TR-GE3

IRFR014TRPbF ^a

IPAK (TO-251)

Lead (Pb)-free and Halogen-free SiHFR014-GE3

SIHFU014-GE3

IRFR014PbF

Lead (Pb)-free

IRFU014PbF

IRFR014TRRPbF

Lead (Pb)-free and Halogen-free IRFR014PbF-BE3 ^ab

IRFR014TRLPbF-BE3 ^abIRFR014TRPbF-BE3 ^ab

Notes

a. See device orientation

b. “-BE3” denotes alternate manufacturing location

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-source voltage

Gate-source voltage

V_DS

V_GS

_C= 25 °C

7.7

Continuous drain current

V_GSat 10 V

I_D

T_C= 100 °C

4.9

Pulsed drain current ^a

I_DM

Linear derating factor

0.20

0.020

27.4

W/°C

Linear derating factor (PCB mount) ^e

Single pulse avalanche energy ^b

Maximum power dissipation

Maximum power dissipation (PCB mount) ^e

Peak diode recovery dV/dt ^c

E_AS

P_D

_C= 25 °C

T_A= 25 °C

2.5

dV/dt

4.5

V/ns

°C

Operating junction and storage temperature range

Soldering recommendations (peak temperature) ^d

T_J, T_stg

-55 to +150

260

for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)

b. V_DD= 25 V, starting T_J= 25 °C, L = 924 μH, R_g= 25 Ω, I_AS= 7.7 A (see fig. 12)

c. I_SD≤ 10 A, dI/dt ≤ 90 A/μs, V_DD≤ V_DS, T_J≤ 150 °C

d. 1.6 mm from case

e. When mounted on 1" square PCB (FR-4 or G-10 material)

S21-0466-Rev. F, 17-May-2021

Document Number: 91263

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...13

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与IRFR014, IRFU014, SiHFR014, SiHFU014相关器件

型号	品牌	获取价格	描述	数据表
IRFR014_10	VISHAY	获取价格	Power MOSFET
IRFR014A	FAIRCHILD	获取价格	ADVANCED POWER MOSFET
IRFR014PBF	INFINEON	获取价格	HEXFET Power MOSFET
IRFR014PBF	VISHAY	获取价格	Power MOSFET
IRFR014PBF	KERSEMI	获取价格	Power MOSFET
IRFR014-T1	SAMSUNG	获取价格	Power Field-Effect Transistor, 8.2A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Meta
IRFR014TR	KERSEMI	获取价格	Power MOSFET
IRFR014TR	VISHAY	获取价格	Power MOSFET
IRFR014TRL	VISHAY	获取价格	Power MOSFET
IRFR014TRL	KERSEMI	获取价格	Power MOSFET

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