Datasheet > IRFR014_10

IRFR014_10

更新时间： 2024-09-28 11:09:47

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
10页	1928K
描述
Power MOSFET

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中文翻译

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数据手册

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IRFR014_10 数据手册

IRFR014, IRFU014, SiHFR014, SiHFU014

Vishay Siliconix

Power MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21

Definition

PRODUCT SUMMARY

V_DS(V)

_DS(on)(Ω)

V_GS= 10 V

0.20

• Dynamic dV/dt Rating

• Surface Mount (IRFR014, SiHFR014)

• Straight Lead (IRFU014, SiHFU014)

• Available in Tape and Reel

• Fast Switching

Q_g(Max.) (nC)

3.1

_gs(nC)

_gd(nC)

5.8

Configuration

Single

• Ease of Paralleling

• Simple Drive Requirements

• Compliant to RoHS Directive 2002/95/EC

DPAK

(TO-252)

IPAK

(TO-251)

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The DPAK is designed for surface mounting using vapor

phase, infrared, or wave soldering techniques. The straight

lead version (IRFU, SiHFU series) is for through-hole

mounting applications. Power dissipation levels up to 1.5 W

are possible in typical surface mount applications.

N-Channel MOSFET

ORDERING INFORMATION

Package

DPAK (TO-252)

SiHFR014TRL-GE3

IRFR014TRLPbF^a

SiHFR014TL-E3^a

IRFR014TRL^a

DPAK (TO-252)

SiHFR014TR-GE3

IRFR014TRPbF^a

SiHFR014T-E3^a

IRFR014TR^a

IPAK (TO-251)

SIHFU014-GE3

IRFU014PbF

SiHFU014-E3

IRFU014

Lead (Pb)-free and Halogen-free

SiHFR014-GE3

IRFR014PbF

SiHFR014-E3

IRFR014

Lead (Pb)-free

SnPb

SiHFR014

SiHFR014TL^a

SiHFR014T^a

SiHFU014

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

_C= 25 °C

7.7

Continuous Drain Current

V_GSat 10 V

I_D

_C= 100 °C

4.9

Pulsed Drain Current^a

I_DM

Linear Derating Factor

0.20

0.020

27.4

W/°C

Linear Derating Factor (PCB Mount)^e

Single Pulse Avalanche Energy^b

Maximum Power Dissipation

Maximum Power Dissipation (PCB Mount)^e

Peak Diode Recovery dV/dt^c

E_AS

P_D

_C= 25 °C

T_A= 25 °C

2.5

dV/dt

4.5

V/ns

°C

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

T_J, T_stg

- 55 to + 150

260^d

for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= 25 V, starting T_J= 25 °C, L = 924 μH, R_g= 25 Ω, I_AS= 7.7 A (see fig. 12).

c. I_SD≤ 10 A, dI/dt ≤ 90 A/μs, V_DD≤ V_DS, T_J≤ 150 °C.

d. 1.6 mm from case.

e. When mounted on 1" square PCB (FR-4 or G-10 material).

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91263

S10-1122-Rev. D, 10-May-10

www.vishay.com

12 3 4 5 6 7...10

中文翻译

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与IRFR014_10相关器件

型号	品牌	获取价格	描述	数据表
IRFR014A	FAIRCHILD	获取价格	ADVANCED POWER MOSFET
IRFR014PBF	INFINEON	获取价格	HEXFET Power MOSFET
IRFR014PBF	VISHAY	获取价格	Power MOSFET
IRFR014PBF	KERSEMI	获取价格	Power MOSFET
IRFR014-T1	SAMSUNG	获取价格	Power Field-Effect Transistor, 8.2A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Meta
IRFR014TR	KERSEMI	获取价格	Power MOSFET
IRFR014TR	VISHAY	获取价格	Power MOSFET
IRFR014TRL	VISHAY	获取价格	Power MOSFET
IRFR014TRL	KERSEMI	获取价格	Power MOSFET
IRFR014TRLPBF	KERSEMI	获取价格	Power MOSFET

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