IRFR010PBF

更新时间： 2024-11-28 11:09:47

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	1677K
描述
Power MOSFET

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IRFR010PBF 数据手册

IRFR010, SiHFR010

Vishay Siliconix

Power MOSFET

FEATURES

• Low Drive Current

• Surface Mount

• Fast Switching

• Ease of Paralleling

PRODUCT SUMMARY

V_DS(V)

_DS(on)()

V_GS= 10 V

0.20

Q_g(Max.) (nC)

2.6

• Excellent Temperature Stability

• Compliant to RoHS Directive 2002/95/EC

_gs(nC)

_gd(nC)

4.8

DESCRIPTION

Configuration

Single

The Power MOSFET technology is the key to Vishay’s

advanced line of Power MOSFET transistors. The efficient

geometry and unique processing of this latest “State of the

Art” design achieves: very low on-state resistance

combined with high transconductance; superior reverse

energy and diode recovery dV/dt capability.

DPAK

(TO-252)

The Power MOSFET transistors also feature all of the well

established advantages of MOSFET’S such as voltage

control, very fast switching, ease of paralleling and

temperature stability of the electrical parameters.

Surface mount packages enhance circuit performance by

reducing stray inductances and capacitance. The DPAK

(TO-252) surface mount package brings the advantages of

Power MOSFET’s to high volume applications where PC

Board surface mounting is desirable. The surface mount

option IRFR9012, SiHFR9012 is provided on 16 mm tape.

The straight lead option IRFU9012, SiHFU9012 of the device

is called the IPAK (TO-251).

N-Channel MOSFET

They are well suited for applications where limited heat

dissipation is required such as, computers and peripherals,

telecommunication equipment, dc-to-dc converters, and a

wide range of consumer products.

ORDERING INFORMATION

Package

DPAK (TO-252)

IRFR010PbF

SiHFR010-E3

IRFR010

Lead (Pb)-free

SnPb

SiHFR010

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

_C= 25 °C

8.2

Continuous Drain Current

V_GSat 10 V

I_D

T_C= 100 °C

5.2

Pulsed Drain Current^a

Avalanche Current^b

I_DM

I_AS

1.5

Linear Derating Factor

0.20

W/°C

Maximum Power Dissipation

T_C= 25 °C

P_D

Peak Diode Recovery dV/dt^c

dV/dt

T_J, T_stg

2.0

V/ns

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

- 55 to + 150

300^d

°C

for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= 25 V, starting T_J= 25 °C, L = 100 μH, R_g= 25 .

c. I_SD 8.2 A, dI/dt  130 A/μs, V_DD 40 V, T_J 150 °C.

d. 1.6 mm from case.

e. When mounted on 1" square PCB (FR-4 or G-10 material).

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91420

S10-1510-Rev. A, 19-Jul-10

www.vishay.com

12 3 4 5 6 7...9

中文翻译

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与IRFR010PBF相关器件

型号	品牌	获取价格	描述	数据表
IRFR010-T1	SAMSUNG	获取价格	Power Field-Effect Transistor, 8.2A I(D), 50V, 0.2ohm, 1-Element, N-Channel, Silicon, Meta
IRFR010TR	VISHAY	获取价格	Power Field-Effect Transistor, 8.2A I(D), 50V, 0.2ohm, 1-Element, N-Channel, Silicon, Meta
IRFR010TRL	VISHAY	获取价格	暂无描述
IRFR010TRLPBF	INFINEON	获取价格	Power Field-Effect Transistor, 8.2A I(D), 50V, 0.2ohm, 1-Element, N-Channel, Silicon, Meta
IRFR010TRLPBF	VISHAY	获取价格	TRANSISTOR 8.2 A, 50 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, FET General Purpo
IRFR010TRR	INFINEON	获取价格	Power Field-Effect Transistor, 8.2A I(D), 50V, 0.2ohm, 1-Element, N-Channel, Silicon, Meta
IRFR012	INFINEON	获取价格	AVALANCHE AND dv/dt RATED
IRFR012-T1	SAMSUNG	获取价格	Power Field-Effect Transistor, 6.7A I(D), 50V, 0.3ohm, 1-Element, N-Channel, Silicon, Meta
IRFR012TR	INFINEON	获取价格	Power Field-Effect Transistor, 6.7A I(D), 50V, 0.3ohm, 1-Element, N-Channel, Silicon, Meta
IRFR014	SAMSUNG	获取价格	N-CHANNEL POWER MOSFET

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