型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRFR010TRR | INFINEON |
获取价格 |
Power Field-Effect Transistor, 8.2A I(D), 50V, 0.2ohm, 1-Element, N-Channel, Silicon, Meta | |
IRFR012 | INFINEON |
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AVALANCHE AND dv/dt RATED | |
IRFR012-T1 | SAMSUNG |
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Power Field-Effect Transistor, 6.7A I(D), 50V, 0.3ohm, 1-Element, N-Channel, Silicon, Meta | |
IRFR012TR | INFINEON |
获取价格 |
Power Field-Effect Transistor, 6.7A I(D), 50V, 0.3ohm, 1-Element, N-Channel, Silicon, Meta | |
IRFR014 | SAMSUNG |
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N-CHANNEL POWER MOSFET | |
IRFR014 | INFINEON |
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Power MOSFET(Vdss = 60 V, Rds(on) = 0.20 Ohm, Id= 7.7A) | |
IRFR014 | KERSEMI |
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Power MOSFET | |
IRFR014 | VISHAY |
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Power MOSFET | |
IRFR014, IRFU014, SiHFR014, SiHFU014 | VISHAY |
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Power MOSFET | |
IRFR014_10 | VISHAY |
获取价格 |
Power MOSFET |