Datasheet > IRFR010, SiHFR010

IRFR010, SiHFR010

更新时间： 2024-11-29 14:53:31

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威世 - VISHAY		/
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Power MOSFET

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IRFR010, SiHFR010

www.vishay.com

Vishay Siliconix

Power MOSFET

FEATURES

• Low drive current

DPAK (TO-252)

• Surface-mount

• Fast switching

• Ease of paralleling

• Excellent temperature stability

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

DESCRIPTION

N-Channel MOSFET

The power MOSFET technology is the key to Vishay’s

advanced line of power MOSFET transistors. The efficient

geometry and unique processing of this latest “State of the

Art” design achieves: very low on-state resistance

combined with high transconductance; superior reverse

energy and diode recovery dV/dt capability.

PRODUCT SUMMARY

V_DS(V)

R_DS(on)(Ω)

V_GS= 10 V

0.20

The power MOSFET transistors also feature all of the well

established advantages of MOSFET’S such as voltage

control, very fast switching, ease of paralleling and

temperature stability of the electrical parameters.

Surface mount packages enhance circuit performance by

reducing stray inductances and capacitance. The DPAK

(TO-252) surface-mount package brings the advantages of

power MOSFET’s to high volume applications where PC

Board surface mounting is desirable. The surface mount

option IRFR9012, SiHFR9012 is provided on 16 mm tape.

The straight lead option IRFU9012, SiHFU9012 of the device

is called the IPAK (TO-251).

Q_g(Max.) (nC)

2.6

_gs(nC)

_gd(nC)

4.8

Configuration

Single

They are well suited for applications where limited heat

dissipation is required such as, computers and peripherals,

telecommunication equipment, dc-to-dc converters, and a

wide range of consumer products.

ORDERING INFORMATION

Package

DPAK (TO-252)

SiHFR010-GE3

IRFR010PbF

DPAK (TO-252)

SiHFR010TR-GE3

IRFR010TRPbF

DPAK (TO-252)

IRFR010PbF-BE3

IRFR010TRRPbF

Lead (Pb)-free and halogen-free

Lead (Pb)-free

SiHFR010TRL-GE3

IRFR010TRLPbF

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-source voltage

Gate-source voltage

V_DS

V_GS

_C= 25 °C

8.2

Continuous drain current

_GSat 10 V

I_D

T_C= 100 °C

5.2

Pulsed drain current ^a

Avalanche current ^b

I_DM

I_AS

1.5

Linear derating factor

0.20

W/°C

Maximum power dissipation

Peak diode recovery dV/dt ^c

T_C= 25 °C

For 10 s

P_D

dV/dt

T_J, T_stg

2.0

V/ns

Operating junction and storage temperature range

Soldering recommendations (peak temperature) ^d

-55 to +150

300

°C

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)

b. V_DD= 25 V, starting T_J= 25 °C, L = 100 μH, R_g= 25 Ω

c. I_SD≤ 8.2 A, dI/dt ≤ 130 A/μs, V_DD≤ 40 V, T_J≤ 150 °C

d. 1.6 mm from case

e. When mounted on 1" square PCB (FR-4 or G-10 material)

S21-0466-Rev. C, 17-May-2021

Document Number: 91420

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...11

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与IRFR010, SiHFR010相关器件

型号	品牌	获取价格	描述	数据表
IRFR010PBF	VISHAY	获取价格	Power MOSFET
IRFR010PBF	KERSEMI	获取价格	Power MOSFET
IRFR010-T1	SAMSUNG	获取价格	Power Field-Effect Transistor, 8.2A I(D), 50V, 0.2ohm, 1-Element, N-Channel, Silicon, Meta
IRFR010TR	VISHAY	获取价格	Power Field-Effect Transistor, 8.2A I(D), 50V, 0.2ohm, 1-Element, N-Channel, Silicon, Meta
IRFR010TRL	VISHAY	获取价格	暂无描述
IRFR010TRLPBF	INFINEON	获取价格	Power Field-Effect Transistor, 8.2A I(D), 50V, 0.2ohm, 1-Element, N-Channel, Silicon, Meta
IRFR010TRLPBF	VISHAY	获取价格	TRANSISTOR 8.2 A, 50 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, FET General Purpo
IRFR010TRR	INFINEON	获取价格	Power Field-Effect Transistor, 8.2A I(D), 50V, 0.2ohm, 1-Element, N-Channel, Silicon, Meta
IRFR012	INFINEON	获取价格	AVALANCHE AND dv/dt RATED
IRFR012-T1	SAMSUNG	获取价格	Power Field-Effect Transistor, 6.7A I(D), 50V, 0.3ohm, 1-Element, N-Channel, Silicon, Meta

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