PD - 95811
IRFR2905Z
IRFU2905Z
HEXFET® Power MOSFET
Features
D
●
●
●
●
●
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
VDSS = 55V
RDS(on) = 14.5mΩ
G
ID = 42A
S
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features of this design are a 175°C junction operating tempera-
ture, fast switching speed and improved repetitive avalanche
rating . These features combine to make this design an extremely
efficientandreliabledeviceforuseinAutomotiveapplicationsand
a wide variety of other applications.
D-Pak
IRFR2905Z
I-Pak
IRFU2905Z
Absolute Maximum Ratings
Parameter
Max.
59
Units
(Silicon Limited)
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
I
I
I
I
@ T = 25°C
C
D
D
D
@ T = 100°C
C
42
A
(Package Limited)
@ T = 25°C
C
42
240
110
DM
P
@T = 25°C
Power Dissipation
C
W
D
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
0.72
± 20
W/°C
V
V
GS
EAS (Thermally limited)
55
mJ
Single Pulse Avalanche Energy Tested Value
Avalanche Current
EAS (Tested )
82
IAR
See Fig.12a, 12b, 15, 16
A
Repetitive Avalanche Energy
EAR
mJ
T
J
Operating Junction and
-55 to + 175
T
Storage Temperature Range
°C
STG
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
300 (1.6mm from case )
10 lbf in (1.1N m)
Thermal Resistance
Parameter
Typ.
–––
–––
–––
Max.
1.38
40
Units
Junction-to-Case
Rθ
Rθ
Rθ
JC
JA
JA
Junction-to-Ambient (PCB mount)
Junction-to-Ambient
°C/W
110
www.kersemi.com
1
11/24/03